ChemInform Abstract: Preparation, Characterization, and Low-Temperature Transition of Cu(tatbp)I, a New Porphyrinic Conductor with Local Moments Coupled to Itinerant Charge Carriers.

ChemInform ◽  
1990 ◽  
Vol 21 (3) ◽  
Author(s):  
K. LIOU ◽  
M. Y. OGAWA ◽  
T. P. NEWCOMB ◽  
G. QUIRION ◽  
M. LEE ◽  
...  
Keyword(s):  
Low Temperature ◽  
Charge Carriers ◽  
Temperature Transition ◽  
Local Moments

Preparation, characterization, and low-temperature transition of (triazatetrabenzoporphyrinato)copper(I) iodide, a new porphyrinic conductor with local moments coupled to itinerant charge carriers

1989 ◽  
Vol 28 (20) ◽  
pp. 3889-3896 ◽  
Author(s):  
Kwangkyoung Liou ◽  
Michael Y. Ogawa ◽  
Timothy P. Newcomb ◽  
Guy Quirion ◽  
Moohee Lee ◽  
...  
Keyword(s):  
Low Temperature ◽  
Charge Carriers ◽  
Temperature Transition ◽  
Local Moments

LOW-TEMPERATURE TRANSITION METAL-SEMICONDUCTOR IN CdCr2Se4 SINGLE CRYSTALS DOPED WITH INDIUM AND GALLIUM

1980 ◽  
Vol 41 (C5) ◽  
pp. C5-155-C5-156 ◽  
Author(s):  
T. G. Aminov ◽  
K. P. Below ◽  
V. T. Kalinnikov ◽  
L. I. Koroleva ◽  
L. N. Tovmasjan
Keyword(s):  
Low Temperature ◽  
Transition Metal ◽  
Single Crystals ◽  
Temperature Transition

Transition Insulator-Metal and Antiferromagnetic-Paramagnetic Cu Doped in La0.47Ca0.53MnO3

2015 ◽  
Vol 1123 ◽  
pp. 73-77 ◽  
Author(s):  
Yohanes Edi Gunanto ◽  
K. Sinaga ◽  
B. Kurniawan ◽  
S. Poertadji ◽  
H. Tanaka ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Magnetic Structure ◽  
Room Temperature ◽  
Paramagnetic Phase ◽  
Perovskite Manganites ◽  
Antiferromagnetic Phase ◽  
Temperature Transition ◽  
Cu Doping ◽  
Metal State

The study of the perovskite manganites La0.47Ca0.53Mn1-xCuxO3 with x = 0, 0.06, 0.09, and 0.13 has been done. The magnetic structure was determined using high-resolution neutron scattering at room temperature and low temperature. All samples were paramagnetic at room temperature and antiferromagnetic at low temperature. Using the SQUID Quantum Design, the samples showed that the doping of the insulating antiferromagnetic phase La0.47Ca0.53MnO3 with Cu doping resulted in the temperature transition from an insulator to metal state, and an antiferromagnetic to paramagnetic phase. The temperature transition from an insulator to metal state ranged from 23 to 100 K and from 200 to 230 K for the transition from an antiferromagnetic to paramagnetic phase.

Infrared spectra of the ammonium ion in crystals. Part VIII. Spectroscopic criteria of highly-bent hydrogen bonds

1980 ◽  
Vol 58 (9) ◽  
pp. 867-874 ◽  
Author(s):  
Osvald Knop ◽  
Wolfgang J. Westerhaus ◽  
Michael Falk
Keyword(s):  
Low Temperature ◽  
Hydrogen Bonds ◽  
Infrared Spectra ◽  
Room Temperature ◽  
Ammonium Ion ◽  
Temperature Transition ◽  
Increasing Temperature

Available evidence suggests that (1) the stretching frequencies of highly-bent hydrogen bonds decrease with increasing temperature, regardless of whether the bonds are static or dynamic in character, to a single acceptor or to several competing acceptors; and (2) departures from symmetric trifurcation (or bifurcation) toward asymmetric situations lower the stretching frequency. In further support of these criteria isotopic probe ion spectra between 10 K and room temperature have been obtained for taurine and for trigonal (NH4)2MF6 (M = Si, Ge, Sn, Ti). Evidence of a low-temperature transition at 100(10) K in trigonal (NH4)2SnF6 is presented, and existence of the previously reported transition at 38.6 K in trigonal (NH4)2SiF6 is confirmed. Symmetry changes associated with these transitions are discussed.

Low-temperature transition to a metallic state in(La0.5Pr0.5)0.7Ca0.3MnO3films

1999 ◽  
Vol 59 (10) ◽  
pp. 6994-7000 ◽  
Author(s):  
N. A. Babushkina ◽  
L. M. Belova ◽  
D. I. Khomskii ◽  
K. I. Kugel ◽  
O. Yu. Gorbenko ◽  
...  
Keyword(s):  
Low Temperature ◽  
Metallic State ◽  
Temperature Transition

scholarly journals Performance of a MFS-based mosfet for low temperature applications

2005 ◽  
Vol 3 (01) ◽  
Author(s):  
P.J. Garcí­a-Ramí­rez ◽  
F. Sandoval-Ibarra
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Power Consumption ◽  
Wide Temperature Range ◽  
Carrier Mobility ◽  
Charge Carriers ◽  
Low Power Consumption ◽  
Current Line ◽  
Key Parameter ◽  
Very Low Temperature

A split-drain MAGFET has been designed for detecting magnetic fields at very low temperature. In this design a key parameter is the Hall angle, which indicates the current line deviation due to the Lorentz force acting on the charge carriers. It is well known that reducing the work temperature the carrier mobility increases, therefore an increase in carrier deflection is expected. As a consequence the split-drain MAGFET is able to detect magnetic fields below 1mT at 77K with low power consumption. Experimental results of a wide temperature range (20K< T

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

2020 ◽  
Vol 1004 ◽  
pp. 231-236
Author(s):  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Alexander A. Lebedev ◽  
Jana Toompuu ◽  
Natalja Sleptsuk
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Electron Irradiation ◽  
Proton Irradiation ◽  
Schottky Diodes ◽  
Differential Resistance ◽  
Charge Carriers ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
Comparative Results

The influence of low-temperature (up to 400°С) annealing on the current-voltage and capacitance–voltage characteristics of Schottky diodes irradiated with protons with an energy of 15 MeV compared with the results of annealing of structures after irradiation with electrons with an energy of 0.9 MeV has been studied. It was shown that in case of proton irradiation with a dose of 4E13 cm-2 and electron irradiation with a dose of 1E16 cm-2, only partial carrier compensation occurs and the differential resistance is completely determined by the number of carriers in the epitaxial layer. The irradiation method has almost no effect on the direct current dependence on the voltage in the exponential segment. The ideality coefficient remains almost unchanged within 1.03 ÷ 1.04. During annealing after proton irradiation, a large activation energy of the process is required. The temperature of the beginning of annealing process during proton irradiation shifts to a larger value, from 150 °C to 250 °C when compared with electron irradiation. It has been demonstrated that at low doses of proton irradiation, the low-temperature annealing leads to the return to the conduction band of up to 65% of the removed charge carriers. After electron irradiation, low-temperature annealing returns up to 90% of the removed charge carriers to the conduction band. This indicates that at room temperature both proton irradiation as well as electron irradiation introduce both stable and unstable defects but in different proportions.

Microstructure related to a low-temperature transition in Ba2NaNb5O15

1997 ◽  
Vol 190 (1) ◽  
pp. 13-18 ◽  
Author(s):  
S. Mori ◽  
N. Yamamoto ◽  
Y. Koyama ◽  
Y. Uesu
Keyword(s):  
Low Temperature ◽  
Temperature Transition
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