scholarly journals Shubnikov–de Haas oscillations in electrodeposited single-crystal bismuth films

2000 ◽  
Vol 61 (10) ◽  
pp. 6631-6636 ◽  
Author(s):  
F. Y. Yang ◽  
Kai Liu ◽  
Kimin Hong ◽  
D. H. Reich ◽  
P. C. Searson ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bismuth Films ◽  
Shubnikov De Haas Oscillations

scholarly journals Магнитосопротивление и квантовые осцилляции в полуметалле WTe-=SUB=-2-=/SUB=-

2021 ◽  
Vol 63 (12) ◽  
pp. 2033
Author(s):  
А.Л. Пирозерский ◽  
Е.В. Чарная ◽  
M.K. Lee ◽  
L.-J. Chang ◽  
С.В. Наумов ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Field Range ◽  
Magnetic Field Range ◽  
Fundamental Frequencies ◽  
Shubnikov De Haas Oscillations ◽  
The Magnetic Field ◽  
Strong Spin

The discovery of extreme magnetoresistance (XMR) in non-magnetic materials attracted attention to the WTe2 semimetal. We have carried out studies of magnetoresistance in a tungsten ditelluride single crystal in the magnetic field range up to 14 T. Magnetoresistance increased with increasing field following a near quadratic law without saturation. The Shubnikov-de Haas oscillations were observed. Four fundamental frequencies were found in the oscillations spectrum, which correspond to two electron and two hole pockets caused by strong spin-orbit coupling.

On the Atomic-Force Microscopy and Electrical Properties of Single-Crystal Bismuth Films

2020 ◽  
Vol 14 (5) ◽  
pp. 913-917
Author(s):  
V. M. Grabov ◽  
V. A. Gerega ◽  
E. V. Demidov ◽  
V. A. Komarov ◽  
M. V. Starytsin ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Single Crystal ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bismuth Films

Structure of bismuth films obtained using an array of identically oriented single-crystal bismuth islands preliminarily grown on a substrate

2017 ◽  
Vol 51 (7) ◽  
pp. 831-833 ◽  
Author(s):  
V. M. Grabov ◽  
E. V. Demidov ◽  
E. K. Ivanova ◽  
N. S. Kablukova ◽  
A. N. Krushelnitckii ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bismuth Films ◽  
Oriented Single Crystal

scholarly journals Low-temperature electrical-transport properties of single-crystal bismuth films under pressure

1996 ◽  
Vol 53 (3) ◽  
pp. 1609-1615 ◽  
Author(s):  
Mei Lu ◽  
R. J. Zieve ◽  
A. van Hulst ◽  
H. M. Jaeger ◽  
T. F. Rosenbaum ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Bismuth Films

scholarly journals Weak antilocalization and Shubnikov–de Haas oscillations in single crystal CaCuSb

2021 ◽  
Vol 104 (20) ◽  
Author(s):  
Souvik Sasmal ◽  
Vikas Saini ◽  
Nicolas Bruyant ◽  
Rajib Mondal ◽  
Ruta Kulkarni ◽  
...  
Keyword(s):  
Single Crystal ◽  
Weak Antilocalization ◽  
Shubnikov De Haas Oscillations

Thermoelectric power of thin single crystal bismuth films

1970 ◽  
Vol 22 (175) ◽  
pp. 189-191 ◽  
Author(s):  
Asha Lal ◽  
V. P. Duggal
Keyword(s):  
Single Crystal ◽  
Thermoelectric Power ◽  
Bismuth Films

scholarly journals Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2010
Author(s):  
Elena S. Makarova ◽  
Anastasiia S. Tukmakova ◽  
Anna V. Novotelnova ◽  
Vladimir A. Komarov ◽  
Vasilisa A. Gerega ◽  
...  
Keyword(s):  
Single Crystal ◽  
Hall Coefficient ◽  
Charge Carriers ◽  
Mica Substrate ◽  
Sensing Applications ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Bismuth Films ◽  
Evaporation Technique ◽  
Zone Recrystallization

We report on the production of 200 and 600 nm thick Bi films on mica substrate with 10 nm thick Sb sublayer between Bi and mica. Two types of films have been studied: block and single crystal. Films were obtained using the thermal evaporation technique using continuous and discrete spraying. Discrete spraying allows smaller film blocks size: 2–6 μ m compared to 10–30 μ m, obtained by the continuous spraying. Single crystal films were made by the zone recrystallization method. Microscopic examination of Bi films with and without Sb sublayer did not reveal an essential distinction in crystal structure. A galvanomagnetic study shows that Sb sublayer results in the change of Bi films properties. Sb sublayer results in the increase of specific resistivity of block films and has no significant impact on single crystal films. For single-crystal films with Sb sublayer with a thickness of 200 nm the Hall coefficient has value 1.5 times higher than for the 600 nm thickness films at 77 K. The change of the Hall coefficient points to change of the contribution of carriers in the conductivity. This fact indicates a change in the energy band structure of the thin Bi film. The most significant impact of the Sb sublayer is on the magnetoresistance of single-crystal films at low temperatures. The increase of magnetoresistance points to the increase of mobility of the charge carriers. In case of detecting and sensing applications the increased carriers mobility can result in a faster device response time.

Shubnikov–de Haas Oscillations in Single-Crystal Bismuth Nanowires Encased in Quartz Template

2013 ◽  
Vol 6 (4) ◽  
pp. 045002 ◽  
Author(s):  
Fumiaki Tsunemi ◽  
Masayuki Murata ◽  
Yusuke Saito ◽  
Katsuhito Shirota ◽  
Yasuhiro Hasegawa ◽  
...  
Keyword(s):  
Single Crystal ◽  
Quartz Template ◽  
Bismuth Nanowires ◽  
Shubnikov De Haas Oscillations

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

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