Electron-phonon interaction in a very low mobilityGaAs/Ga1−xAlxAsδ-doped gated quantum well

2000 ◽  
Vol 61 (3) ◽  
pp. 2028-2033 ◽  
Author(s):  
R. Fletcher ◽  
Y. Feng ◽  
C. T. Foxon ◽  
J. J. Harris
1998 ◽  
Vol 32 (6) ◽  
pp. 665-667
Author(s):  
V. V. Bondarenko ◽  
V. V. Zabudskii ◽  
F. F. Sizov

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