Dynamic deformation potential electron-phonon interaction in disordered quantum well

2012 ◽  
Author(s):  
P. Tripathi ◽  
S. T. Hasan ◽  
S. S. Z. Ashraf ◽  
A. C. Sharma
Keyword(s):  
Quantum Well ◽  
Dynamic Deformation ◽  
Deformation Potential ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures

1998 ◽  
Vol 32 (6) ◽  
pp. 665-667
Author(s):  
V. V. Bondarenko ◽  
V. V. Zabudskii ◽  
F. F. Sizov
Keyword(s):  
Quantum Well ◽  
Electron Mobility ◽  
Type Ii ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

Electron-phonon interaction in a very low mobilityGaAs/Ga1−xAlxAsδ-doped gated quantum well

2000 ◽  
Vol 61 (3) ◽  
pp. 2028-2033 ◽  
Author(s):  
R. Fletcher ◽  
Y. Feng ◽  
C. T. Foxon ◽  
J. J. Harris
Keyword(s):  
Quantum Well ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

PHONON BROADENING OF IMPURITY SPECTRAL LINES: II. APPLICATION TO SILICON

1963 ◽  
Vol 41 (11) ◽  
pp. 1823-1835 ◽  
Author(s):  
Robert Barrie ◽  
Kyoji Nishikawa
Keyword(s):  
General Theory ◽  
Spectral Lines ◽  
Deformation Potential ◽  
Phonon Interaction ◽  
Potential Description ◽  
Electron Phonon Interaction ◽  
Shallow Impurity ◽  
Hydrogenic Model ◽  
Numerical Estimations

The general theory of the phonon broadening of impurity spectral lines discussed in an earlier paper is applied to shallow impurity levels in silicon. With the use of a modified hydrogenic model and a deformation potential description of the electron–phonon interaction, expressions are obtained for typical contributions to the half-widths. Some numerical estimations are made for both acceptor and donor cases and are compared with experiment.

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