scholarly journals Metal-induced gap states and Schottky barrier heights at nonreactive GaN/noble-metal interfaces

2000 ◽  
Vol 61 (24) ◽  
pp. 16736-16742 ◽  
Author(s):  
S. Picozzi ◽  
A. Continenza ◽  
G. Satta ◽  
S. Massidda ◽  
A. J. Freeman
Keyword(s):  
Schottky Barrier ◽  
Noble Metal ◽  
Barrier Heights ◽  
Metal Interfaces ◽  
Gap States

Reaction And Interdiffusion at III-V Compound Semiconductor-Metal Interfaces

1985 ◽  
Vol 54 ◽  
Author(s):  
L. J. Brillson
Keyword(s):  
Schottky Barrier ◽  
Surface Science ◽  
Compound Semiconductor ◽  
Atomic Scale ◽  
Interfacial Chemistry ◽  
Barrier Heights ◽  
Barrier Formation ◽  
At Iii ◽  
Metal Interfaces

ABSTRACTThe characterization of III-V compound semiconductor-metal interfaces by surface science techniques has led to new relationships between interfacial chemistry and Schottky barrier formation. These and recent results on ternary alloy III-V compounds suggest a greater control of Schottky barrier heights by atomic scale techniques and advanced III-V materials than previously believed.

Oxygen stabilization of molecular beam epitaxial Al‐GaAs Schottky barrier heights

1982 ◽  
Vol 53 (6) ◽  
pp. 4521-4523 ◽  
Author(s):  
K. Okamoto ◽  
C. E. C. Wood ◽  
L. Rathbun ◽  
L. F. Eastman
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Barrier Heights

scholarly journals Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation

2005 ◽  
Vol 86 (6) ◽  
pp. 062108 ◽  
Author(s):  
Q. T. Zhao ◽  
U. Breuer ◽  
E. Rije ◽  
St. Lenk ◽  
S. Mantl
Keyword(s):  
Schottky Barrier ◽  
Sulfur Segregation ◽  
Barrier Heights

Schottky barrier heights of epitaxial Ni–silicides on Si(111)

1986 ◽  
Vol 4 (3) ◽  
pp. 855-859 ◽  
Author(s):  
M. Liehr ◽  
P. E. Schmid ◽  
F. K. LeGoues ◽  
P. S. Ho
Keyword(s):  
Schottky Barrier ◽  
Barrier Heights ◽  
Ni Silicides
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