Temperature dependence of photoresponse inp-typeGaAs/AlxGa1−xAsmultiple quantum wells: Theory and experiment

2000 ◽  
Vol 61 (20) ◽  
pp. 13798-13804 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Theory And Experiment

Theory and experiment of the temperature dependence of GaAlAs/GaAs HBTs characteristics for power amplifier applications

1995 ◽  
Vol 38 (2) ◽  
pp. 279-286 ◽  
Author(s):  
J.P. Bailbé ◽  
L. Andrieux ◽  
A. Cazarré ◽  
T. Camps ◽  
A. Marty ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Power Amplifier ◽  
Theory And Experiment

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

Field and temperature dependence of intrinsic diamagnetism in graphene: Theory and experiment

2015 ◽  
Vol 91 (9) ◽  
Author(s):  
Zhilin Li ◽  
Lianlian Chen ◽  
Sheng Meng ◽  
Liwei Guo ◽  
Jiao Huang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Theory And Experiment

Temperature dependence of the photoluminescence of Zn1−xCdxSe/ZnSe strained‐layer quantum wells

1995 ◽  
Vol 67 (1) ◽  
pp. 103-105 ◽  
Author(s):  
E. Tournié ◽  
C. Morhain ◽  
M. Leroux ◽  
C. Ongaretto ◽  
J. P. Faurie
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Strained Layer

scholarly journals Temperature dependence of the absorption coefficient in doped quantum wells

1999 ◽  
Vol 29 (4) ◽  
pp. 723-726 ◽  
Author(s):  
M.R. Baldan ◽  
R.M. Serra ◽  
P.D. Emmel ◽  
A. Ferreira da Silva
Keyword(s):  
Absorption Coefficient ◽  
Quantum Wells ◽  
Temperature Dependence
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