Electronic structure of self-assembled InAs quantum dots in InP: An anisotropic quantum-dot system

1999 ◽  
Vol 60 (16) ◽  
pp. R11289-R11292 ◽  
Author(s):  
H. Pettersson ◽  
R. J. Warburton ◽  
J. P. Kotthaus ◽  
N. Carlsson ◽  
W. Seifert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Quantum Dot ◽  
Inas Quantum Dots ◽  
Anisotropic Quantum Dot ◽  
Self Assembled

Electronic structure of self-assembled InAs quantum dots in GaAs matrix

1998 ◽  
Vol 73 (8) ◽  
pp. 1092-1094 ◽  
Author(s):  
P. N. Brounkov ◽  
A. Polimeni ◽  
S. T. Stoddart ◽  
M. Henini ◽  
L. Eaves ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Inas Quantum Dots ◽  
Gaas Matrix ◽  
Self Assembled

The Strain Status of the Buried Self-assembled InAs quantum dots using MeV technique

2006 ◽  
Vol 916 ◽  
Author(s):  
Hsing-Yeh Wang ◽  
C.H. Chen ◽  
H. Niu ◽  
S.C. Wu ◽  
C.P. Lee
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Plane Strain ◽  
Growth Direction ◽  
Lateral Direction ◽  
Inas Quantum Dots ◽  
Self Assembled ◽  
First Time ◽  
Strain Status

AbstractThe strain status of the buried InAs self-assembled quantum dot was comprehended by measurement first time. Results show the in-plane strain is compressive and lattice in the growth direction is lager than the lattice of GaAs. The strain of the sample annealed at 650 degree relaxes in the growth direction. The growth and the lateral direction become relaxed in the sample annealed at 750 degree.

Lateral Transport through Self-Assembled InAs Quantum Dots Located in the Narrow Gap Electrodes

1999 ◽  
Vol 571 ◽  
Author(s):  
S. K. Jung ◽  
S. W. Hwang ◽  
J. H. Park ◽  
B. D. Min ◽  
E. K. Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Differential Resistance ◽  
Electrode Spacing ◽  
Metal Electrodes ◽  
Inas Quantum Dots ◽  
Peak Structure ◽  
Current Voltage ◽  
Single Quantum Dot ◽  
Self Assembled

ABSTRACTWe have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-0D resonant tunneling through the single quantum dot positioned in between the electrodes.

Electronic structure of self-assembled InAs quantum dots

2002 ◽  
Vol 13 (2-4) ◽  
pp. 208-211 ◽  
Author(s):  
C Bock ◽  
K.H Schmidt ◽  
U Kunze ◽  
V.V Khorenko ◽  
S Malzer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Inas Quantum Dots ◽  
Self Assembled

Magnetotunneling spectroscopy imaging of electron wave functions in self-assembled InAs quantum dots

2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Wave Functions ◽  
Electron Wave ◽  
Inas Quantum Dots ◽  
Self Assembled

Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP

2005 ◽  
Vol 36 (3-6) ◽  
pp. 227-230 ◽  
Author(s):  
H. Pettersson ◽  
L. Landin ◽  
Ying Fu ◽  
M. Kleverman ◽  
M. Borgström ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Photocurrent Spectroscopy ◽  
Self Assembled
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