scholarly journals Microscopic theory of vertical-transport phenomena in semiconductor heterostructures: Interplay between two- and three-dimensional hot-carrier relaxation

1999 ◽  
Vol 60 (3) ◽  
pp. 1953-1963 ◽  
Author(s):  
Stefano Barbieri ◽  
Fabio Beltram ◽  
Fausto Rossi
Keyword(s):  
Transport Phenomena ◽  
Three Dimensional ◽  
Microscopic Theory ◽  
Vertical Transport ◽  
Semiconductor Heterostructures ◽  
Carrier Relaxation ◽  
Hot Carrier

scholarly journals Ultrafast carrier relaxation and vertical-transport phenomena in semiconductor superlattices: A Monte Carlo analysis

1995 ◽  
Vol 51 (23) ◽  
pp. 16943-16953 ◽  
Author(s):  
F. Rossi ◽  
T. Meier ◽  
P. Thomas ◽  
S. W. Koch ◽  
P. E. Selbmann ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Transport Phenomena ◽  
Monte Carlo Analysis ◽  
Vertical Transport ◽  
Semiconductor Superlattices ◽  
Carrier Relaxation ◽  
Ultrafast Carrier

Hot carrier relaxation in three dimensional gapped Dirac semi-metals

2018 ◽  
Vol 51 (1) ◽  
pp. 015101 ◽  
Author(s):  
Sunchao Huang ◽  
Matthew Sanderson ◽  
Jie Tian ◽  
Qinjun Chen ◽  
Fengqiu Wang ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Carrier Relaxation ◽  
Hot Carrier

QUANTUM REFLECTION, EVAPORATION, AND TRANSPORT CURRENTS AT 4He SURFACES

2006 ◽  
Vol 20 (30n31) ◽  
pp. 5047-5056
Author(s):  
V. APAJA ◽  
E. KROTSCHECK ◽  
A. RIMNAC ◽  
R. E. ZILLICH
Keyword(s):  
Excited States ◽  
Theoretical Study ◽  
Transport Phenomena ◽  
Microscopic Theory ◽  
Second Order ◽  
Quantum Liquid ◽  
Quantum Reflection ◽  
Quantum Liquids ◽  
Inhomogeneous Quantum

In this work, we study transport currents in excited states. This requires the calculation of particle currents [Formula: see text] to second order in the excitation amplitudes. For that purpose, we take a well-tested microscopic theory of inhomogeneous quantum liquids and extend it to find the mass currents created when atoms scatter off a surface or when excitations evaporate atoms. This is the first theoretical study of transport phenomena in a quantum liquid based on a quantitative microscopic theory.

Thermally activated current–voltage asymmetry in quantum-well inter-subband photodetectors

1996 ◽  
Vol 74 (S1) ◽  
pp. 9-15 ◽  
Author(s):  
P. V. Kolev ◽  
M. J. Deen ◽  
H. C. Liu ◽  
Jianmeng Li ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Transport Phenomena ◽  
Infrared Region ◽  
Avalanche Photodetectors ◽  
Long Wavelength ◽  
Hot Carrier ◽  
Thermally Activated ◽  
Current Voltage ◽  
Long Wavelength Infrared

Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.

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