Polarization dependence of the resonant Raman scattering from electrons in a spin-split subband of a III-V semiconductor quantum well

1999 ◽  
Vol 60 (20) ◽  
pp. 14255-14259 ◽  
Author(s):  
V. A. Froltsov ◽  
A. G. Mal’shukov ◽  
K. A. Chao
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Polarization Dependence ◽  
Semiconductor Quantum Well ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Fano effect of resonant Raman scattering in a semiconductor quantum well

1994 ◽  
Vol 50 (12) ◽  
pp. 8584-8588 ◽  
Author(s):  
Kui-juan Jin ◽  
Shao-hua Pan ◽  
Guo-zhen Yang
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Fano Effect ◽  
Semiconductor Quantum Well ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Composition Dependent Resonant Raman Scattering in Al0.33Ga0.67As/InxGa1-xAs1-yNy Multiquantum Wells

2006 ◽  
Vol 518 ◽  
pp. 17-22 ◽  
Author(s):  
S. Lazić ◽  
J.M. Calleja ◽  
R. Hey ◽  
K. Ploog
Keyword(s):  
Light Scattering ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Vibration Modes ◽  
Inelastic Light Scattering ◽  
Resonance Energies ◽  
Resonant Raman ◽  
Resonant Raman Scattering

InxGa1-xAs1-yNy/Al0.33Ga0.67As multiquantum wells grown by plasma-assisted molecular beam epitaxy are studied by resonant inelastic light scattering. Sharp vibration modes have been observed at 323, 402, 454 and 501 cm-1. Their intensities resonate at the barrier bandgap reduced by the presence of N. Their resonance energies reveal the influence of the N concentration on the barrier gap at the multiquantum well interfaces. These peaks are interpreted in terms of local vibrations involving the pairing of N atoms, which seems to occur mostly at the quantum well interfaces due to preferential bonding of N to Al.

Excitonic channel of two-phonon resonant Raman scattering in a quantum well

1994 ◽  
Vol 89 (10) ◽  
pp. 855-857
Author(s):  
L.I. Korovin ◽  
S.T. Pavlov ◽  
B.E. Eshpulatov
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Electronic confinement in a single GaAs quantum well probed by low-frequency resonant Raman scattering

1997 ◽  
Vol 56 (3) ◽  
pp. 1486-1490 ◽  
Author(s):  
A. Mlayah ◽  
A. Sayari ◽  
R. Grac ◽  
A. Zwick ◽  
R. Carles ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Low Frequency ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Large electric-field-induced enhancement of resonant Raman scattering of a single quantum well

1994 ◽  
Vol 15 (4) ◽  
pp. 377-380
Author(s):  
Z.C. Yan ◽  
E. Goovaerts ◽  
C. Van Hoof ◽  
J. Genoe ◽  
G. Borghst ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Raman Scattering ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Large Electric Field ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman Scattering of synchrotron X-rays by xenon: Test of angular and polarization dependence of RRS

1985 ◽  
Vol 322 (2) ◽  
pp. 183-189 ◽  
Author(s):  
H. Czerwinski ◽  
F. Smend ◽  
D. Schaupp ◽  
M. Schumacher ◽  
A. H. Millhouse ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Polarization Dependence ◽  
X Rays ◽  
Resonant Raman ◽  
Resonant Raman Scattering
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