Lattice strain and static disorder determination inSi/Si1−xGex/Siheterostructures by convergent beam electron diffraction

1999 ◽  
Vol 60 (19) ◽  
pp. 13750-13761 ◽  
Author(s):  
Stefano Frabboni ◽  
Francesca Gambetta ◽  
Aldo Armigliato ◽  
Roberto Balboni ◽  
Simone Balboni ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Lattice Strain ◽  
Convergent Beam Electron Diffraction ◽  
Static Disorder ◽  
Beam Electron ◽  
Convergent Beam

On the microstructure, chemistry, and dielectric function of BaTiO3 MOCVD thin films

1994 ◽  
Vol 9 (2) ◽  
pp. 426-430 ◽  
Author(s):  
V.P. Dravid ◽  
H. Zhang ◽  
L.A. Wills ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Dielectric Function ◽  
Lattice Strain ◽  
Chemical Vapor ◽  
Convergent Beam Electron Diffraction ◽  
Organic Chemical ◽  
Beam Electron ◽  
Spatially Resolved ◽  
Convergent Beam

Thin films of BaTiO3 deposited on (100)LaAlO3 substrate by metal-organic chemical vapor deposition (MOCVD) are investigated using several electron-optical techniques. Combined high resolution transmission electron microscopy (HRTEM), electron energy loss spectrometry (EELS), and convergent beam electron diffraction (CBED) indicate a substantial influence of lattice strain on the structural and optical characteristics of BaTiO3 films. Spatially resolved EELS and CBED studies indicate that the substrate influence persists up to about 40 nm away from the interface. The changes in the dielectric function of the films, as inferred from spatially resolved EELS, appear to correlate well with internal lattice strain in the films as deduced from convergent beam electron diffraction (CBED).

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