Optical Absorption by Impurities in p-Type Gallium Phosphide

1972 ◽  
Vol 6 (2) ◽  
pp. 683-684 ◽  
Author(s):  
J. M. Dishman ◽  
M. DiDomenico
Keyword(s):  
Optical Absorption ◽  
Gallium Phosphide ◽  
P Type

Single GaP Nanowire Nonlinear Characterization with the aid of Optical Trap

Nanoscale ◽  
2021 ◽  
Author(s):  
Alexey D. Bolshakov ◽  
Ivan I Shishkin ◽  
Andrey Machnev ◽  
Mihail Petrov ◽  
Demid Kirilenko ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Gallium Phosphide ◽  
Optical Trap ◽  
Optoelectronic Devices ◽  
Semiconductor Nanowires ◽  
Nonlinear Characterization

Semiconductor nanowires provide numerous capabilities to advance development of future optoelectronic devices. Among III-V material family, gallium phosphide (GaP) is an attractive platform with low optical absorption and high nonlinear...

scholarly journals Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Bruno C. da Silva ◽  
Odilon D. D. Couto ◽  
Hélio T. Obata ◽  
Mauricio M. de Lima ◽  
Fábio D. Bonani ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Gallium Phosphide ◽  
Direct Band Gap ◽  
Direct Band

scholarly journals Author Correction: Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Bruno C. da Silva ◽  
Odilon D. D. Couto ◽  
Hélio T. Obata ◽  
Mauricio M. de Lima ◽  
Fábio D. Bonani ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Gallium Phosphide ◽  
Direct Band Gap ◽  
Direct Band

Optical and EPR Study of Defects in Cadmium Germanium Arsenide

2002 ◽  
Vol 744 ◽  
Author(s):  
Lihua Bai ◽  
N. Y. Garces ◽  
Nanying Yang ◽  
P. G. Schunemann ◽  
S. D. Setzler ◽  
...  
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Room Temperature ◽  
Hole Concentration ◽  
Paramagnetic Defect ◽  
Paramagnetic Resonance ◽  
Anion Site ◽  
Shallow Acceptors ◽  
P Type ◽  
Cadmium Germanium Arsenide

ABSTRACTBulk crystals of CdGeAs2 have been characterized using photoluminescence (PL), optical absorption, Hall effect, and electron paramagnetic resonance (EPR) techniques. An absorption band near 5.5 microns at room temperature is observed in all of the p-type samples we have studied. A correlation between the magnitude of this optical absorption and the excess hole concentration at room temperature is established. Also, an EPR signal is found to correlate with the strength of this absorption band. PL data are consistent with an increased concentration of shallow acceptors being present in high-absorption samples. From the EPR data, we suggest that a model for the paramagnetic defect associated with the absorption at 5.5 microns may be an acceptor on an anion site.

Zn-Doped p-Type Gallium Phosphide Nanowire Photocathodes from a Surfactant-Free Solution Synthesis

Nano Letters ◽  
2012 ◽  
Vol 12 (10) ◽  
pp. 5407-5411 ◽  
Author(s):  
Chong Liu ◽  
Jianwei Sun ◽  
Jinyao Tang ◽  
Peidong Yang
Keyword(s):  
Gallium Phosphide ◽  
Free Solution ◽  
Solution Synthesis ◽  
P Type

Optical absorption in neutron irradiated gallium phosphide

1973 ◽  
Vol 18 (2) ◽  
pp. 213-216
Author(s):  
V. Ya. Pivovarov ◽  
V. D. Tkachev
Keyword(s):  
Optical Absorption ◽  
Gallium Phosphide

Electro-Optical Studies of Vanadium in GaP by Space Charge Spectroscopies

1992 ◽  
Vol 261 ◽  
Author(s):  
Georges Bremond ◽  
G. Guillot ◽  
P. Roura ◽  
W. Ulrici
Keyword(s):  
Optical Absorption ◽  
Deep Level ◽  
Donor Level ◽  
Complete Understanding ◽  
Optical Studies ◽  
Electrical And Optical Properties ◽  
Related Donor ◽  
Type V ◽  
P Type ◽  
Level Identification

ABSTRACTA complete understanding of the electrical and optical properties of the Vanadium related donor level (VGa3+/VGa4+) in GaP is deduced from a number of different characterization techniques (deep level transient and deep level optical spectroscopies, optical absorption) performed on p-type V doped GaP. The VGa3+/VGa4+ donor level is located at Ev+0.25eV. This assignment is based on the correlation of optical absorption spectra and the photoneutralization cross-section σp°(hv) curve obtained by deep level optical spectroscopy confirming that this technique is very unique for deep level identification in semiconductor materials.

Monolayer SnP3: an excellent p-type thermoelectric material

Nanoscale ◽  
2019 ◽  
Vol 11 (42) ◽  
pp. 19923-19932 ◽  
Author(s):  
Xue-Liang Zhu ◽  
Peng-Fei Liu ◽  
Junrong Zhang ◽  
Ping Zhang ◽  
Wu-Xing Zhou ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Thermoelectric Material ◽  
Carrier Mobility ◽  
Optical Absorption Coefficient ◽  
Two Dimensional ◽  
Potential Applications ◽  
High Carrier Mobility ◽  
High Carrier ◽  
P Type

Monolayer SnP3 is a novel two-dimensional (2D) semiconductor material with high carrier mobility and large optical absorption coefficient, implying its potential applications in the photovoltaic and thermoelectric (TE) fields.

Minority carrier lifetime in p-type gallium phosphide

1972 ◽  
Vol 5 (2) ◽  
pp. 108-116 ◽  
Author(s):  
J.A.W. van der Does de Bye ◽  
A.T. Vink
Keyword(s):  
Gallium Phosphide ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
P Type
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