High-resolution core-level study of initial oxygen adsorption on Si(001): Surface stoichiometry and anomalous Si2pcore-level shifts

1999 ◽  
Vol 59 (16) ◽  
pp. R10413-R10416 ◽  
Author(s):  
H. W. Yeom ◽  
H. Hamamatsu ◽  
T. Ohta ◽  
R. I. G. Uhrberg
Keyword(s):  
High Resolution ◽  
Oxygen Adsorption ◽  
Core Level ◽  
Initial Oxygen ◽  
Level Shifts

Surface core level shifts in III–V semiconductors: a high resolution photoemission study

1995 ◽  
Vol 76 ◽  
pp. 139-144 ◽  
Author(s):  
C. Ottaviani ◽  
M. Capozi ◽  
C. Quaresima ◽  
M. Matteucci ◽  
C. Crotti ◽  
...  
Keyword(s):  
High Resolution ◽  
Core Level ◽  
Level Shifts ◽  
Photoemission Study

A high resolution photoemission study of surface core-level shifts in clean and oxygen-covered Ir(2 1 0) surfaces

2004 ◽  
Vol 135 (2-3) ◽  
pp. 105-112 ◽  
Author(s):  
M.J Gladys ◽  
I Ermanoski ◽  
G Jackson ◽  
J.S Quinton ◽  
J.E Rowe ◽  
...  
Keyword(s):  
High Resolution ◽  
Core Level ◽  
Level Shifts ◽  
Photoemission Study

Core‐level shifts of silicon–hydrogen species on chemically treated Si surfaces studied by high‐resolution x‐ray photoelectron spectroscopy

1995 ◽  
Vol 67 (14) ◽  
pp. 2049-2051 ◽  
Author(s):  
C. H. Bjorkman ◽  
J. L. Alay ◽  
H. Nishimura ◽  
M. Fukuda ◽  
T. Yamazaki ◽  
...  
Keyword(s):  
High Resolution ◽  
Photoelectron Spectroscopy ◽  
Core Level ◽  
X Ray ◽  
Chemically Treated ◽  
Level Shifts

HIGH RESOLUTION CORE LEVEL SPECTROSCOPY AT THE Cu/Ru(0001) INTERFACE

2002 ◽  
Vol 09 (02) ◽  
pp. 723-727 ◽  
Author(s):  
T. H. ANDERSEN ◽  
L. BECH ◽  
J. ONSGAARD ◽  
S. V. HOFFMANN ◽  
Z. LI
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
Binding Energy ◽  
Energy Shift ◽  
Core Level ◽  
Photoemission Spectroscopy ◽  
Copper Adsorption ◽  
X Ray ◽  
Level Shifts ◽  
Binding Energy Shift

Copper adsorption on Ru(0001) has been studied by synchrotron radiation. The clean Ru 3d 5/2 spectra were found to consist of two components with a binding energy shift of 400 meV. The component with the lower binding energy represents the first layer of ruthenium atoms. Adsorption of copper gives rise to core level shifts of the Ru 3d 5/2 components, which were studied as a function of Cu coverage. Experiments were carried out with copper coverages varying from the submonolayer range up to two monolayers of copper. The binding energy of the Cu 2p 3/2 level was measured by X-ray photoemission spectroscopy.

Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis

2000 ◽  
Vol 166 (1-4) ◽  
pp. 214-219 ◽  
Author(s):  
P De Padova ◽  
R Larciprete ◽  
C Quaresima ◽  
A Reginelli ◽  
P Perfetti
Keyword(s):  
High Resolution ◽  
Temperature Effect ◽  
Core Level

Core-level shifts in complex metallic systems from first principle

2006 ◽  
Vol 243 (11) ◽  
pp. 2447-2464 ◽  
Author(s):  
Weine Olovsson ◽  
Christian Göransson ◽  
Tobias Marten ◽  
Igor A. Abrikosov
Keyword(s):  
Core Level ◽  
First Principle ◽  
Level Shifts ◽  
Metallic Systems

Surface core level shifts of A II–VI compound: CdTe

1988 ◽  
Vol 206 (3) ◽  
pp. L871-L879 ◽  
Author(s):  
K.C. Prince ◽  
G. Paolucci ◽  
V. Cháb ◽  
M. Surman ◽  
A.M. Bradshaw
Keyword(s):  
Core Level ◽  
Level Shifts

Semiconductor surface core level shifts by use of selected overlayers

1990 ◽  
Vol 41 (6) ◽  
pp. 1034-1036 ◽  
Author(s):  
J C Woicik ◽  
T Kendelewicz ◽  
K Miyano ◽  
R Cao ◽  
P Pianetta ◽  
...  
Keyword(s):  
Core Level ◽  
Semiconductor Surface ◽  
Level Shifts

Si(111) 2×1 surface core-level shifts investigated by use of Ge overlayer

1989 ◽  
Vol 40 (18) ◽  
pp. 12463-12467 ◽  
Author(s):  
J. C. Woicik ◽  
P. Pianetta ◽  
T. Kendelewicz
Keyword(s):  
Core Level ◽  
Level Shifts
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