Theory of orientation-sensitive near-edge fine-structure core-level spectroscopy

1999 ◽  
Vol 59 (20) ◽  
pp. 12807-12814 ◽  
Author(s):  
M. Nelhiebel ◽  
P.-H. Louf ◽  
P. Schattschneider ◽  
P. Blaha ◽  
K. Schwarz ◽  
...  
Keyword(s):  
2001 ◽  
Vol 488 (1-2) ◽  
pp. 43-51 ◽  
Author(s):  
C.J. Hirschmugl ◽  
G. Paolucci ◽  
F. Esch ◽  
S. Lizzit ◽  
K.-M. Schindler
Keyword(s):  

1994 ◽  
Vol 08 (30) ◽  
pp. 1889-1903
Author(s):  
J.A. CARLISLE ◽  
M.T. SIEGER ◽  
T. MILLER ◽  
T.-C. CHIANG

Photoemission intensities from core levels derived from surface and bulk atoms of a solid exhibit oscillations as a function of the excitation photon energy. These oscillations cannot be described by the classical layer attenuation model, which has been the basis for intensity analysis and quantitative structural modeling in a number of studies. The physics responsible for these oscillations is the extended photoemission fine structure (EPFS) above the core level absorption edge, which contains structural information in regard to surface bond lengths. The present paper examines in detail this phenomenon for the Si 2p core level of the Si (111)−(7×7) surface. The EPFS is found to modulate the surface-to-bulk Si 2p core level intensity ratios up to ~50%; thus, structural models based on a surface-to-bulk intensity ratio analysis using the classical layer attenuation model at a few photon energies may suffer large errors. This EPFS may be responsible for the ongoing debate in the literature over the assignment of the surface core levels to structural features on both the (111) and (100) surfaces of Si and Ge. This dilemma is resolved for the (7×7) surface. Using the usual three-component fit of the Si 2p core level (a bulk component and two surface components, S1 and S2), the EPFS signals from the individual components are separately analyzed. The results show the S2 component to be derived from adatom emission. The S1 component is unresolved, and represents emission from several different types of atoms in the top double layer of the (7×7) reconstruction.


1993 ◽  
Vol 298 (1) ◽  
pp. 134-142 ◽  
Author(s):  
D.E. Guy ◽  
Y.V. Ruts ◽  
S.P. Sentemov ◽  
V.I. Grebennikov ◽  
O.B. Sokolov

1998 ◽  
Vol 05 (05) ◽  
pp. 1057-1086 ◽  
Author(s):  
P. S. Mangat ◽  
P. Soukiassian

Extended X-ray absorption fine structure (EXAFS) has been known for half a century. However, using synchrotron radiation, it has developed into a powerful tool for determining the atomic structure of a wide variety of surfaces and interfaces. The power of this technique lies in its sensitivity to the local environment of a particular element. Photoemission extended X-ray absorption fine structure (PEXAFS) is a new variation of electron detection surface EXAFS (SEXAFS) using photoemission spectroscopy in the constant initial state mode, Due to small escape depths, a very high surface sensitivity is achieved. Other major advantages of this new technique include (i) an improved signal/noise ratio allowing very short data collection times, which is an especially useful feature for short lifetime surfaces, and (ii) double-checking interatomic distances. Combined with core level and valence band photoemission spectroscopies. PEXAFS provides the exceptional ability to probe the atomic geometry and the electronic structure at the same time and for the same surface. It thus gives access to important issues, such as (i) surface reconstruction and/or relaxation, (ii) bonding nature, (iii) adsorption site and (iv) initial interface formation. Furthermore, it could be used to clarify photoemission core level shift origin by allowing one to discriminate structural changes from other causes as initial or final state effects. This article reviews the latest PEXAFS investigations for model elemental (silicon) and compound (indium phosphide) semiconductor surfaces and their interfaces with alkali metals, antimony, aluminum, bismuth and silver.


1997 ◽  
Vol 269 (3-4) ◽  
pp. 371-377 ◽  
Author(s):  
J.N Andersen ◽  
A Beutler ◽  
S.L Sorensen ◽  
R Nyholm ◽  
B Setlik ◽  
...  
Keyword(s):  

1995 ◽  
Vol 42 (2) ◽  
pp. 255-262 ◽  
Author(s):  
H. M. Köppe ◽  
A. L. D. Kilcoyne ◽  
J. Feldhaus ◽  
A. M. Bradshaw

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