scholarly journals Coplanar and grazing incidence x-ray-diffraction investigation of self-organized SiGe quantum dot multilayers

1998 ◽  
Vol 58 (12) ◽  
pp. 7934-7943 ◽  
Author(s):  
V. Holý ◽  
A. A. Darhuber ◽  
J. Stangl ◽  
S. Zerlauth ◽  
F. Schäffler ◽  
...  
2015 ◽  
Vol 48 (2) ◽  
pp. 444-454 ◽  
Author(s):  
Neelima Paul ◽  
Jassen Brumbarov ◽  
Amitesh Paul ◽  
Ying Chen ◽  
Jean-Francois Moulin ◽  
...  

Self-organized anodic titania (TiO2) nanotube arrays are an interesting model anode material for use in Li-ion batteries owing to their excellent rate capability, their cycling stability and their enhanced safety compared to graphite. A composite material where carbothermally treated conductive TiO2nanotubes are used as support for a thin silicon film has been shown to have the additional advantage of high lithium storage capacity. This article presents a detailed comparison of the structure, surface and bulk morphology of self-organized conductive TiO2nanotube arrays, with and without silicon coating, using a combination of X-ray diffraction, X-ray reflectivity, grazing-incidence small-angle X-ray scattering (GISAXS) and time-of-flight grazing-incidence small-angle neutron scattering (TOF-GISANS) techniques. X-ray diffraction shows that the nanotubes crystallize in the anatase structure with a preferred (004) orientation. GISAXS and TOF-GISANS are used to study the morphology of the nanotube arrays, delivering values for the inner nanotube radius and intertubular distances with high statistical relevance because of the large probed volume. The analyses reveal the distinct signatures of a prominent lateral correlation of the TiO2nanotubes of ∼94 nm and a nanotube radius of ∼46 nm. The porosity averaged over the entire film using TOF-GISANS is 46%. The inner nanotube radius is reduced to half (∼23 nm) through the silicon coating, but the prominent lateral structure is preserved. Such in-depth morphological investigations over large sample volumes are useful towards development of more efficient battery electrode morphologies.


2007 ◽  
Vol 40 (5) ◽  
pp. 874-882 ◽  
Author(s):  
Geoffroy Prévot ◽  
Alessandro Coati ◽  
Bernard Croset ◽  
Yves Garreau

It is demonstrated that grazing-incidence X-ray diffraction is a direct tool for measuring the elastic displacement modes near the surface of a crystal. Due to the fact that X-ray diffraction is a Fourier transform of the electronic density, and thus, of the atomic positions, elastic displacement modes appear as additional spots in the reciprocal space. Their characteristics can be directly derived from the elastic constants of the material. Measuring the amplitude of the diffracted wave for these peaks allows direct determination of the force distribution at the surface, which is at the origin of the elastic displacements. Various examples of such determinations are given for self-organized surfaces and for vicinal surfaces.


2004 ◽  
Vol 84 (6) ◽  
pp. 885-887 ◽  
Author(s):  
R. T. Lechner ◽  
T. U. Schülli ◽  
V. Holý ◽  
G. Springholz ◽  
J. Stangl ◽  
...  

1996 ◽  
Vol 68 (6) ◽  
pp. 785-787 ◽  
Author(s):  
A. Krost ◽  
F. Heinrichsdorff ◽  
D. Bimberg ◽  
A. Darhuber ◽  
G. Bauer

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2836-2841 ◽  
Author(s):  
T. FROMHERZ ◽  
J. STANGL ◽  
R. T. LECHNER ◽  
E. WINTERSBERGER ◽  
G. BAUER ◽  
...  

We report on the growth of SiGe quantum dot crystals which are realized by depositing Ge on a two-dimensionally pit-patterned Si substrate and subsequent growth of Si spacer and Ge island layers. Lateral periods of 100 nm are obtained by employing deep UV lithography using synchrotron radiation. The vertical period of the typically 10 period dot superlattices was of the order of 10 nm. Ordering of the islands was investigated by atomic force microscopy as well as by high resolution x-ray diffraction studies. From the quantitative evaluation of the x-ray diffraction data a mean Ge content of about 60% in the quantum dots was obtained and an rms. deviation from ideal lattice sites of about 3 nm was found. A simulation of the eigenenergies based on the nextnano3 simulation package was used to interpret the measured photoluminescence data.


2004 ◽  
Vol 69 (15) ◽  
Author(s):  
H. Bulou ◽  
F. Scheurer ◽  
P. Ohresser ◽  
A. Barbier ◽  
S. Stanescu ◽  
...  

2001 ◽  
Vol 34 (10A) ◽  
pp. A1-A5 ◽  
Author(s):  
V Holý ◽  
J Stangl ◽  
G Springholz ◽  
M Pinczolits ◽  
G Bauer

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