Transition from direct to indirect band structure induced by the AlSb layer inserted in the GaSb/AlSb quantum well

1998 ◽  
Vol 58 (7) ◽  
pp. 3594-3596 ◽  
Author(s):  
T. Wang ◽  
F. Kieseling ◽  
A. Forchel
Keyword(s):  
Band Structure ◽  
Quantum Well

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase

2018 ◽  
Vol 52 (11) ◽  
pp. 1403-1406 ◽  
Author(s):  
S. V. Gudina ◽  
A. S. Bogolyubskii ◽  
V. N. Neverov ◽  
N. G. Shelushinina ◽  
M. V. Yakunin
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Valence Band ◽  
Band Spectrum ◽  
Loop Model ◽  
Valence Band Spectrum

Band structure and spontaneous emission spectrum of InGaAsSb/GaSb quantum well

2014 ◽  
Vol 26 (11) ◽  
pp. 111008
Author(s):  
安宁 An Ning ◽  
李占国 Li Zhanguo ◽  
何斌太 He Bintai ◽  
芦鹏 Lu Peng ◽  
方铉 Fang Xuan ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Emission Spectrum ◽  
Spontaneous Emission ◽  
Spontaneous Emission Spectrum

Nitride band-structure model in a quantum well laser simulator

2008 ◽  
Vol 40 (5-6) ◽  
pp. 295-299 ◽  
Author(s):  
Anusha Venkatachalam ◽  
P. D. Yoder ◽  
Benjamin Klein ◽  
Aditya Kulkarni
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Structure Model ◽  
Quantum Well Laser ◽  
Band Structure Model

k.P energy-band structure of ZnO/Zn1−xMgxO quantum well heterostructures

2006 ◽  
Vol 39 (1-4) ◽  
pp. 91-96 ◽  
Author(s):  
K. Zitouni ◽  
A. Kadri ◽  
P. Lefebvre ◽  
B. Gil
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Energy Band ◽  
Energy Band Structure

scholarly journals Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well

1999 ◽  
Vol 4 (S1) ◽  
pp. 642-647
Author(s):  
Michael C.Y. Chan ◽  
Kwok-On Tsang ◽  
E. Herbert Li ◽  
Steven P. Denbaars
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Quantum Well ◽  
Thermal Annealing ◽  
Diffusion Coefficients ◽  
Green Light ◽  
Optical Gain ◽  
Quantum Well Structures ◽  
Strained Layer ◽  
Constant Diffusion

Quantum well (QW) material engineering has attracted a considerable amount of interest from many people because of its ability to produce a number of optoelectronic devices. QW composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero-interface. The intermixing process is an attractive way to achieve the modification of the QW band structure. It is known that the band structure is a fundamental determinant for such electronic and optical properties of materials as the optical gain, the refractive index and the absorption. During the process, the as-grown square-QW compositional profile is modified to a graded profile, thereby altering the confinement profile and the subband structure in the QW. The blue-shifting of the wavelength in the intermixed QW structure is found in this process.In recent years, III-nitride semiconductors have attracted much attention. This is mainly due to their large bandgap range from 1.89eV (wurtzite InN) to 3.44eV (wurtzite GaN). InGaN/GaN quantum well structures have been used to achieve high lumens blue and green light emitting diodes. Such structures also facilitate the production of full colour LED displays by complementing the colour spectrum of available LEDs.In this paper, the effects of thermal annealing on the strained-layer InGaN/GaN QW will be presented. The effects of intermixing on the confinement potential of InGaN/GaN QWs have been theoretically analysed, with sublattices interdiffusion as the basis. This process is described by Fick’s law, with constant diffusion coefficients in both the well and the barrier layers. The diffusion coefficients depend on the annealing temperature, time and the activation energy of constituent atoms. The optical properties of intermixed InGaN/GaN QW structure of different interdiffusion rates have been theoretically analyzed for applications of novel optical devices. The photoluminescence studies and the intermixed QW modeling have been used to understand the effects of intermixing.

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