Effects of finite impurity concentration in van Hove superconductors

1998 ◽  
Vol 58 (5) ◽  
pp. 2448-2451
Author(s):  
I. Tifrea ◽  
M. Crisan
Keyword(s):  
Impurity Concentration

The nucleation of cavities at grain boundaries

1987 ◽  
Vol 45 ◽  
pp. 288-291
Author(s):  
P. J. Goodhew
Keyword(s):  
Surface Tension ◽  
Surface Energy ◽  
Grain Boundaries ◽  
Radiation Damage ◽  
Impurity Concentration ◽  
Driving Force ◽  
Nucleation And Growth ◽  
Phase Boundaries ◽  
Cavity Nucleation ◽  
Spherical Bubble

Cavity nucleation and growth at grain and phase boundaries is of concern because it can lead to failure during creep and can lead to embrittlement as a result of radiation damage. Two major types of cavity are usually distinguished: The term bubble is applied to a cavity which contains gas at a pressure which is at least sufficient to support the surface tension (2g/r for a spherical bubble of radius r and surface energy g). The term void is generally applied to any cavity which contains less gas than this, but is not necessarily empty of gas. A void would therefore tend to shrink in the absence of any imposed driving force for growth, whereas a bubble would be stable or would tend to grow. It is widely considered that cavity nucleation always requires the presence of one or more gas atoms. However since it is extremely difficult to prepare experimental materials with a gas impurity concentration lower than their eventual cavity concentration there is little to be gained by debating this point.

scholarly journals Attractive Fermi polarons at nonzero temperatures with a finite impurity concentration

2018 ◽  
Vol 98 (1) ◽  
Author(s):  
Hui Hu ◽  
Brendan C. Mulkerin ◽  
Jia Wang ◽  
Xia-Ji Liu
Keyword(s):  
Impurity Concentration

The Vacancy Generation Influence on the Initial Stage of Ion Implantation

2015 ◽  
Vol 1097 ◽  
pp. 29-34
Author(s):  
E.S. Parfenova ◽  
Anna G. Knyazeva
Keyword(s):  
Surface Layer ◽  
Ion Implantation ◽  
Metal Surface ◽  
Impurity Concentration ◽  
Coupled Model ◽  
Irreversible Processes ◽  
Concentration Profiles ◽  
Thermodynamics Of Irreversible Processes ◽  
Vacancy Generation ◽  
Initial Stage

The coupled model is presented to describe the elements penetration into the surface layer of metal during the process of ion implantation. Mechanical stresses arising due to the interaction of particles with the surface affect the redistribution of the implanted impurity. In addition, the existence of vacancies in the metal surface and their generation under the stresses influence are taken into account. The kinetic law is written on the basis of the thermodynamics of irreversible processes. The solution had been found numerically. As a result, the distributions of impurity concentration and deformations have been obtained for various time moments. The comparison of the concentration profiles with vacancies and without their have been given.

Metastable Solid Solutions of Impurities in Silicon

1981 ◽  
Vol 7 ◽  
Author(s):  
J. S. Williams ◽  
K. T. Short
Keyword(s):  
High Resolution ◽  
Solid Solutions ◽  
Impurity Concentration ◽  
Rutherford Backscattering ◽  
Equilibrium Solubility ◽  
Furnace Annealing ◽  
Strain Effects ◽  
Crystal Boundary ◽  
Silicon Lattice ◽  
Supersaturated Solid Solutions

ABSTRACTHigh resolution Rutherford backscattering and channeling techniques have been used to investigate the formation and stability of supersaturated solid solutions of As, Sb, In, Pb, Tℓ and Bi implants in (100) silicon. In all cases nearsubstitutional solid solubilities far exceeding maximum equilibrium solubility limits can be achieved by furnace annealing at temperatures ≤ 600°C. Details of the recrystallisation process indicate that the maximum impurity concentration which can be incorporated onto silicon lattice sites may be controlled by impurity size and associated strain effects at the amorphous-crystal boundary during epitaxial regrowth.

Deformation Induced Percolating Porosity In High Pressure Torsioned (HPT) Copper

2011 ◽  
Vol 702-703 ◽  
pp. 105-108 ◽  
Author(s):  
Matthias Wegner ◽  
Jörn Leuthold ◽  
Sergiy V. Divinski ◽  
Daria Setman ◽  
Michael Zehetbauer ◽  
...  
Keyword(s):  
High Pressure ◽  
Impurity Concentration ◽  
High Pressure Torsion ◽  
Applied Pressure ◽  
Processing Parameters ◽  
Tracer Method ◽  
Radiotracer Technique ◽  
Degree Of Deformation ◽  
Radio Tracer ◽  
Structural Aspects

Copper of different purity levels (4N, 5N) produced by High Pressure Torsion (HPT) with varying processing parameters is investigated utilizing the radiotracer technique. While the degree of deformation is constant, the effect of the applied quasi-hydrostatic pressure and of the impurity concentration on the as deformed samples is analysed. By applying the radio tracer method micro structural aspects are revealed that are not easily accessible by conventional methods. The measurements indicate the formation of a percolating porosity during the HPT process as a function of the applied pressure and (although less pronounced) of the impurity concentration.

Evaluation of Impurity Concentration in Semiconductors from the Relaxation of Thermally Stimulated Currents

2004 ◽  
Vol 40 (7) ◽  
pp. 673-679 ◽  
Author(s):  
V. I. Chmyrev ◽  
V. M. Skorikov ◽  
V. V. Zuev ◽  
E. V. Larina
Keyword(s):  
Impurity Concentration ◽  
Thermally Stimulated Currents
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