Temperature dependence of the electronic structure nearEFand electron-phonon interaction inC60/Ag(100)single layers

1998 ◽  
Vol 58 (4) ◽  
pp. 2228-2232 ◽  
Author(s):  
A. Goldoni ◽  
C. Cepek ◽  
E. Magnano ◽  
A. D. Laine ◽  
S. Vandrè ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Temperature Dependence ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

scholarly journals Temperature dependence of the dielectric function and critical points of α-SnS from 27 to 350 K

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hoang Tung Nguyen ◽  
Van Long Le ◽  
Thi Minh Hai Nguyen ◽  
Tae Jung Kim ◽  
Xuan Au Nguyen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Dielectric Function ◽  
Spectral Energy ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Temperature Dependences ◽  
Exciton Effect ◽  
Bose Einstein ◽  
Temperature Gradient Method

Abstract We report the temperature dependence of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of biaxial α-SnS in the spectral energy region from 0.74 to 6.42 eV and temperatures from 27 to 350 K using spectroscopic ellipsometry. Bulk SnS was grown by temperature gradient method. Dielectric response functions were obtained using multilayer calculations to remove artifacts due to surface roughness. We observe sharpening and blue-shifting of CPs with decreasing temperature. A strong exciton effect is detected only in the armchair direction at low temperature. New CPs are observed at low temperature that cannot be detected at room temperature. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that contains the Bose–Einstein statistical factor and the temperature coefficient for describing the electron–phonon interaction.

Temperature dependence of band gaps in semiconductors: Electron-phonon interaction

2012 ◽  
Vol 86 (19) ◽  
Author(s):  
J. Bhosale ◽  
A. K. Ramdas ◽  
A. Burger ◽  
A. Muñoz ◽  
A. H. Romero ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gaps ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

The electronic structure and the photoluminescence property of the photocatalyst BaZn1/3Nb2/3O3

2007 ◽  
Vol 22 (8) ◽  
pp. 2185-2188 ◽  
Author(s):  
B. Xu ◽  
W.F. Zhang ◽  
X.Y. Liu ◽  
J. Yin ◽  
Z.G. Liu
Keyword(s):  
Electronic Structure ◽  
Conduction Band ◽  
Function Theory ◽  
Stokes Shift ◽  
Photoluminescence Property ◽  
X Ray Diffraction ◽  
Phonon Interaction ◽  
Strong Electron ◽  
X Ray ◽  
Electron Phonon Interaction

The photocatalyst BaZn1/3Nb2/3O3 with ABO3 perovskite structure has been synthesized by using a solid-state reaction process. It was characterized by x-ray diffraction and photoluminescence spectroscopy. The luminescence band centers around 285 nm and shows a large Stokes shift compared with the excitation spectrum, indicating a strong electron–phonon interaction in the photocatalyst BaZn1/3Nb2/3O3. The electronic structure of BaZn1/3Nb2/3O3 was calculated by using the pseudopotential method of the density function theory. It shows that the conduction band should be mainly composed of the Nb 4d states, and the valence band should be mainly composed of the O 2p state. The densities of the O 2p states and the Zn 4s states at the bottom of the conduction band are very low. The Zn 4s states show an expanded structure, which was proposed to be helpful for the migration of the photoexcited carriers, thus favoring the photocatalytic activity of BaZn1/3Nb2/3O3.

THE TEMPERATURE DEPENDENCE OF THE ENERGY LEVELS OF SHALLOW DONOR IMPURITIES IN SILICON

1967 ◽  
Vol 45 (4) ◽  
pp. 1421-1438 ◽  
Author(s):  
C. Y. Cheung ◽  
Robert Barrie
Keyword(s):  
Temperature Dependence ◽  
Energy Levels ◽  
Electronic States ◽  
Shallow Donor ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Doped Silicon ◽  
Phosphorus Doped

A calculation is made of the temperature dependence of the energy levels of shallow donor impurities in silicon. This temperature dependence arises from the electron–phonon interaction and we consider mixing only of the {1s}, {2s), and {2p0} electronic states. A comparison is made with experiment for the case of phosphorus-doped silicon.

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