scholarly journals Current-voltage scaling of chiral and gauge-glass models of two-dimensional superconductors

1998 ◽  
Vol 58 (17) ◽  
pp. 11161-11164 ◽  
Author(s):  
Enzo Granato
Keyword(s):  
Voltage Scaling ◽  
Two Dimensional ◽  
Current Voltage ◽  
Gauge Glass

Analytical two-dimensional model of solar cell current-voltage characteristics

1991 ◽  
Vol 34 (6) ◽  
pp. 553-558
Author(s):  
F. Caldararu ◽  
M. Caldararu ◽  
S. Nan ◽  
D. Nicolaescu ◽  
S. Vasile
Keyword(s):  
Solar Cell ◽  
Two Dimensional ◽  
Dimensional Model ◽  
Current Voltage ◽  
Two Dimensional Model ◽  
Cell Current ◽  
Current Voltage Characteristics

Current-voltage characteristics and quasi-two-dimensional vortex-glass transition in epitaxial Bi2Sr2Ca2Cu3Ox films

Cryogenics ◽  
1995 ◽  
Vol 35 (4) ◽  
pp. 263-269 ◽  
Author(s):  
H. Yamasaki ◽  
K. Endo ◽  
S. Kosaka ◽  
M. Umeda ◽  
S. Yoshida ◽  
...  
Keyword(s):  
Glass Transition ◽  
Two Dimensional ◽  
Vortex Glass ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Current-voltage characteristics of two-dimensional vortex-glass models

1995 ◽  
Vol 51 (21) ◽  
pp. 15304-15311 ◽  
Author(s):  
R. A. Hyman ◽  
Mats Wallin ◽  
M. P. A. Fisher ◽  
S. M. Girvin ◽  
A. P. Young
Keyword(s):  
Two Dimensional ◽  
Vortex Glass ◽  
Current Voltage ◽  
Current Voltage Characteristics

Static and dynamic behaviors of the two-dimensional XY gauge glass

1996 ◽  
Vol 46 (S4) ◽  
pp. 2279-2280
Author(s):  
M. Y. Choi ◽  
S. Y. Park ◽  
B. J. Kim
Keyword(s):  
Two Dimensional ◽  
Dynamic Behaviors ◽  
Gauge Glass

ENERGY QUANTIZATION ON THE CURRENT-VOLTAGE CHARACTERISTIC OF NANOSCALE TWO-DIMENSIONAL MOSFET

2013 ◽  
Vol 27 (17) ◽  
pp. 1350077 ◽  
Author(s):  
ENG SIEW KANG ◽  
MUHAMMAD TAGHI AHMADI ◽  
SOHAIL ANWAR ◽  
RAZALI ISMAIL
Keyword(s):  
Quantum Confinement ◽  
Voltage Characteristic ◽  
Two Dimensional ◽  
Carrier Distribution ◽  
Current Voltage Characteristic ◽  
Velocity Saturation ◽  
Energy Quantization ◽  
Current Saturation ◽  
Current Voltage ◽  
Good Agreement

The current-voltage characteristic for nanoscale MOSFET is presented based to the velocity saturation and quantum confinement. It has been clarified that the drain velocity which is saturated with an increased drain voltage limits the onset of the current saturation. In the presence of high electric field, the motion of the velocity saturation that is randomly oriented in the equilibrium becomes streamlined and unidirectional. The model presents the current-voltage characteristic from the drift-diffusion regime to the ballistic regime with the presence of the quantum confinement on the charge carrier distribution and the energy quantization. The obtained results are considered in the modeling of the current-voltage characteristics of nanoscale two-dimensional MOSFET and show good agreement with the experimental data without using any artificial parameters.

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