Theoretical and experimental study of the quasistatic capacitance of metal-insulator–hydrogenated amorphous silicon structures: Strong evidence for the defect-pool model

1998 ◽  
Vol 58 (16) ◽  
pp. 10401-10414 ◽  
Author(s):  
J. P. Kleider ◽  
F. Dayoub
Keyword(s):  
Experimental Study ◽  
Amorphous Silicon ◽  
Strong Evidence ◽  
Hydrogenated Amorphous Silicon ◽  
Metal Insulator ◽  
Pool Model ◽  
Silicon Structures ◽  
Hydrogenated Amorphous

Experimental Study of Sweep-Out in N-Type Hydrogenated Amorphous Silicon

1987 ◽  
Vol 95 ◽  
Author(s):  
G. Winborne ◽  
L. XU ◽  
M. Silver ◽  
H. M. Branz
Keyword(s):  
Experimental Study ◽  
Amorphous Silicon ◽  
Density Of States ◽  
Decay Constant ◽  
Hydrogenated Amorphous Silicon ◽  
Temporal Response ◽  
Mobility Edge ◽  
Subsequent Time ◽  
Silicon Structures ◽  
Hydrogenated Amorphous

AbstractExperimental results on the temporal response of i/n/i hydrogenated amorphous silicon structures are presented as a function of voltage. The current is initially space charge limited followed by a transition to an emission limited current. The data generally exhibits four subsequent time dependence regimes e.g. :(1) an exponential decay, (2) followed by a t−2 decay, (3) then a t−1 decay and (4) lastly a t(α−1) decay where α<1. The current versus time allows one to derive a density of states. The deduced density of states in the arsenic doped n layers displays a peak at shallow energies followed by an exponential with an energy decay constant of approximately 300°K followed by a flat region and finally followed by a slowly rising density of states. The initial Fermi level is estimated to be within the peak located less than 0.3eV from the mobility edge.

An experimental and theoretical study of Auger lineshapes in hydrogenated amorphous silicon structures

1994 ◽  
Vol 303 (1-2) ◽  
pp. 266-276 ◽  
Author(s):  
C.P. Lund ◽  
B.W. Clare ◽  
P.J. Jennings ◽  
J.C.L. Cornish ◽  
G.T. Hefter
Keyword(s):  
Amorphous Silicon ◽  
Theoretical Study ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Structures ◽  
Hydrogenated Amorphous

Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures

1991 ◽  
Vol 219 ◽  
Author(s):  
J. Kanicki ◽  
C. Godet ◽  
A. V. Gelatos
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Localized States ◽  
Negative Bias ◽  
Amorphous Silicon Nitride ◽  
Bias Stress ◽  
Silicon Structures ◽  
Hydrogenated Amorphous

ABSTRACTThe effects of positive and negative bias stress on hydrogenated amorphous silicon nitride / crystalline silicon and hydrogenated amorphous silicon nitride / hydrogenated amorphous silicon (a-Si:H) structures are investigated as a function of stress time, stress temperature and stress bias. It is shown that in both structures bias stress induces a parallel shift of the C-V (capacitance-voltage) characteristics. For a given stress bias the direction of the C-V shift depends on the sign of the applied stress voltage, while the magnitude of the C-V shift depends on stress time and temperature. In addition, it is shown that positive bias stress slightly increases the number of localized states in the a-Si:H mobility gap, but negative bias stress does not. These results lead us to conclude that the C-V shift is not induced by dangling bond defects in a-Si:H but rather by carrier trapping in the insulator.

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