Current-voltage instability in free-standing semiconductor quantum wires

1998 ◽  
Vol 57 (11) ◽  
pp. 6297-6300 ◽  
Author(s):  
Lev G. Mourokh
Keyword(s):  
Quantum Wires ◽  
Free Standing ◽  
Voltage Instability ◽  
Current Voltage

Current–Voltage Hysteresis Behavior of PVA-Assisted Functionalized Single-Walled Carbon Nanotube Free-Standing Film

2018 ◽  
Vol 122 (51) ◽  
pp. 29094-29105 ◽  
Author(s):  
Amit Kumar Das ◽  
Ayan Mukherjee ◽  
Koumei Baba ◽  
Ruriko Hatada ◽  
Rabindranath Bhowmik ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Free Standing ◽  
Single Walled Carbon Nanotube ◽  
Hysteresis Behavior ◽  
Single Walled Carbon ◽  
Current Voltage ◽  
Voltage Hysteresis

ONE-PHONON-ASSISTED ELECTRON RESONANT RAMAN SCATTERING IN FREE-STANDING QUANTUM WIRES

2007 ◽  
Vol 21 (17) ◽  
pp. 2989-3000
Author(s):  
XIANG-FU ZHAO ◽  
CUI-HONG LIU
Keyword(s):  
Raman Scattering ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Longitudinal Optical ◽  
Phonon Modes ◽  
Free Standing ◽  
Surface Optical ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Valence Bands

The scattering intensity (SI) for an electron resonant Raman scattering (ERRS) process in a free-standing semiconductor quantum wire of cylindrical geometry associated with bulk longitudinal optical (LO) phonon modes or the surface optical (SO) phonon modes is calculated for T=0 K . The Fröhlich interaction is considered to illustrate the theory for a GaAs system. Electron states are confined within a free-standing quantum wire (FSW). Single parabolic conduction and valence bands are assumed. The selection rules are studied. Numerical results and a discussion are also presented for various radii of the cylindrical quantum wires.

Charge trapping and current–voltage bistability in InGaAs quantum wires

1996 ◽  
Vol 80 (2) ◽  
pp. 936-940 ◽  
Author(s):  
R. Cingolani ◽  
R. Rinaldi ◽  
M. De Vittorio ◽  
L. Vasanelli ◽  
A. Cola ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Charge Trapping ◽  
Current Voltage

The Nanofabrication of Quantum Wires for the Next Generation of Thermoelectrics

1998 ◽  
Vol 545 ◽  
Author(s):  
D. L. Demske ◽  
J. L. Price ◽  
N. A. Guardala ◽  
N. Lindsey ◽  
J. H. Barkyoumb ◽  
...  
Keyword(s):  
Electron Micrographs ◽  
Quantum Wires ◽  
Incident Beam ◽  
Scanning Electron Micrographs ◽  
Carbon Ions ◽  
Atomic Force ◽  
Transmission Electron ◽  
Ion Accelerator ◽  
Current Voltage ◽  
Potentiostatic Electrodeposition

AbstractThe fabrication of a thermoelectric nanocomposite material consisting of nanometer scale bismuth (Bi) wires embedded in a porous mica template host is discussed in detail. In fabricating the mica templates, a positive ion accelerator is employed to irradiate 10 μm thick mica sheets with collimated beams of 15 MeV carbon ions at fluence levels of 1.5 × 1013 ions/cm2. The normally incident beam generates latent nuclear damage tracks in the direction oriented perpendicularly to the mica basal plane. Atomic Force Microscope (AFM) pictures of etched tracks verify that we have fabricated porous templates containing arrays of channels with densities up to 1013/cm2 and diameters as small as 5 nanometers, thus providing pores having an aspect ratio of about 2000:1. Scanning electron micrographs of 50 nm diameter tracks show that these are parallel channels with smooth, non-tapered walls. In addition, to fabricate the wires we have developed a solution-electrodeposition process employing a PC processor-driven potentiostatic/galvanostatic system. Currently, we are electrochemically embedding 10 μm long Bi wires through the nanochannel templates. The potentiostatic electrodeposition behavior of these wires is described. Current-voltage waveforms confirm that the wires are electrically uninterrupted through the mica template. Transmission electron micrographs (TEM) show these wires are single crystals, of well-defined orientation with diameters down to 50 Å. We observe bundles of 80 Å wires with a packing density of about 109/cm2. Energy Dispersive X-ray Spectroscopy (EDS) has corroborated the presence of Bi in the nanochannels. The observation of the bismuth crystal orientation in the porous mica template is examined.

Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs

2006 ◽  
Vol 527-529 ◽  
pp. 1317-1320 ◽  
Author(s):  
Aivars J. Lelis ◽  
Daniel B. Habersat ◽  
G. Lopez ◽  
J.M. McGarrity ◽  
F. Barry McLean ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Linear Increase ◽  
Oxide Semiconductor ◽  
Bias Stress ◽  
Voltage Instability ◽  
Current Voltage ◽  
Oxide Traps ◽  
Charge Tunneling

We have observed instability in the threshold voltage, VT, of SiC metal-oxide semiconductor field-effect transistors (MOSFETs) due to gate-bias stressing. This effect has routinely been observed by us in all 4H and 6H SiC MOSFETs from three different manufacturers—even at room temperature. A positive-bias stress, applying an electric field of about 1 to 2 MV/cm across the gate oxide, for 3 minutes followed by a negative-bias stress for another 3 minutes typically results in a shift of the ID-VGS current-voltage characteristic in the range of 0.25 to 0.5 V and is repeatable. We speculate that this effect is due to the presence of a large number of near-interfacial oxide traps that presumably lie in the oxide transition region that extends several nm into the oxide from the SiC interface, caused by the presence of C and strained SiO2. This instability is consistent with charge tunneling in and out of these near-interfacial oxide traps, which in irradiated Si MOSFETs has been attributed to border traps. Also consistent with charge tunneling is the observed linear increase in the magnitude of the SiC VT instability with log (time).

X-ray diffraction and reflectivity analysis of GaAs/InGaAs free-standing trapezoidal quantum wires

2001 ◽  
Vol 34 (10A) ◽  
pp. A179-A182 ◽  
Author(s):  
A Ulyanenkov ◽  
K Inaba ◽  
P Mikulík ◽  
N Darowski ◽  
K Omote ◽  
...  
Keyword(s):  
Quantum Wires ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray
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