Charge trapping and current–voltage bistability in InGaAs quantum wires

1996 ◽  
Vol 80 (2) ◽  
pp. 936-940 ◽  
Author(s):  
R. Cingolani ◽  
R. Rinaldi ◽  
M. De Vittorio ◽  
L. Vasanelli ◽  
A. Cola ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Charge Trapping ◽  
Current Voltage

A comparative study of charge trapping effect in p-type MoTe2 and WSe2 FETs using pulsed current–voltage measurements

2021 ◽  
Vol 60 (1) ◽  
pp. 011003
Author(s):  
Jeong Yong Yang ◽  
Chan Ho Lee ◽  
Young Taek Oh ◽  
Jiyeon Ma ◽  
Junseok Heo ◽  
...  
Keyword(s):  
Comparative Study ◽  
Charge Trapping ◽  
Pulsed Current ◽  
Trapping Effect ◽  
Current Voltage ◽  
P Type

Evidence of Hysteresis in a New p-i-n-i-p-i-n Amorphous Silicon Device

1997 ◽  
Vol 467 ◽  
Author(s):  
D. Caputo ◽  
G. De Cesare ◽  
F. Palma
Keyword(s):  
Charge Trapping ◽  
Bistable Behavior ◽  
Novel Device ◽  
Voltage Curve ◽  
Current Voltage ◽  
Recombination Processes ◽  
Current Voltage Curve ◽  
Numerical Device ◽  
Silicon Device

ABSTRACTA novel device based on a-Si:H p+-i-n−-i-p−-i-n+ structure, showing a hysteresis in its current-voltage curve is reported. A numerical device model allows to investigate in detail the fundamental role of the two lightly doped n− and p− layers, where charge trapping determines the bistable behavior of the device. The ON condition is mantained until the ambipolar charge injection overcomes the fixed charge. The transition OFF-ON starts when, increasing the applied voltage, one of the two lightly doped layers becomes completely depleted. The transition ON-OFF is, instead, mainly dependent on the recombination processes occurring in the central doped layers. Devices with hysteresis around 2 V and tum-on voltage around 12 are presented.

scholarly journals Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 489 ◽  
Author(s):  
Hogyoung Kim ◽  
Seok Choi ◽  
Byung Joon Choi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Charge Trapping ◽  
Negative Temperature ◽  
Atomic Layer ◽  
Algan Layer ◽  
Pulse Ratio ◽  
Current Voltage ◽  
Frenkel Emission ◽  
A Charge

Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance–voltage (C–V) measurements. Under low reverse bias condition, the sample with the pulse ratio of 2:1 was explained by Poole–Frenkel emission and the negative temperature dependence for the sample with the pulse ratio of 1:2 was associated with the acceptor levels in the AlGaN layer. Fast interface traps at 0.24–0.29 eV were observed for the samples with the pulse ratios of 1:1 and 1:2, whereas bulk traps at ~0.34 eV were observed for the sample with the pulse ratio of 2:1. Higher trap densities were obtained from the C–V hysteresis measurements when the pulse ratios were 1:1 and 1:2, indicating the presence of a charge trapping interfacial layer. According to the X-ray photoelectron spectroscopy spectra, the pulse ratio of 2:1 was found to have less oxygen-related defects in the AlGaN layer.

The Nanofabrication of Quantum Wires for the Next Generation of Thermoelectrics

1998 ◽  
Vol 545 ◽  
Author(s):  
D. L. Demske ◽  
J. L. Price ◽  
N. A. Guardala ◽  
N. Lindsey ◽  
J. H. Barkyoumb ◽  
...  
Keyword(s):  
Electron Micrographs ◽  
Quantum Wires ◽  
Incident Beam ◽  
Scanning Electron Micrographs ◽  
Carbon Ions ◽  
Atomic Force ◽  
Transmission Electron ◽  
Ion Accelerator ◽  
Current Voltage ◽  
Potentiostatic Electrodeposition

AbstractThe fabrication of a thermoelectric nanocomposite material consisting of nanometer scale bismuth (Bi) wires embedded in a porous mica template host is discussed in detail. In fabricating the mica templates, a positive ion accelerator is employed to irradiate 10 μm thick mica sheets with collimated beams of 15 MeV carbon ions at fluence levels of 1.5 × 1013 ions/cm2. The normally incident beam generates latent nuclear damage tracks in the direction oriented perpendicularly to the mica basal plane. Atomic Force Microscope (AFM) pictures of etched tracks verify that we have fabricated porous templates containing arrays of channels with densities up to 1013/cm2 and diameters as small as 5 nanometers, thus providing pores having an aspect ratio of about 2000:1. Scanning electron micrographs of 50 nm diameter tracks show that these are parallel channels with smooth, non-tapered walls. In addition, to fabricate the wires we have developed a solution-electrodeposition process employing a PC processor-driven potentiostatic/galvanostatic system. Currently, we are electrochemically embedding 10 μm long Bi wires through the nanochannel templates. The potentiostatic electrodeposition behavior of these wires is described. Current-voltage waveforms confirm that the wires are electrically uninterrupted through the mica template. Transmission electron micrographs (TEM) show these wires are single crystals, of well-defined orientation with diameters down to 50 Å. We observe bundles of 80 Å wires with a packing density of about 109/cm2. Energy Dispersive X-ray Spectroscopy (EDS) has corroborated the presence of Bi in the nanochannels. The observation of the bismuth crystal orientation in the porous mica template is examined.

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

2002 ◽  
Vol 747 ◽  
Author(s):  
M. P. Singh ◽  
C. S. Thakur ◽  
N. Bhat ◽  
S. A. Shivashankar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
X Ray ◽  
Transmission Electron ◽  
Current Voltage ◽  
Low Pressure Mocvd

ABSTRACTWe report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.

Electronic Properties of ZnO Varistors: A New Model

1981 ◽  
Vol 5 ◽  
Author(s):  
G. E. Pike
Keyword(s):  
Grain Boundaries ◽  
Impact Ionization ◽  
Thermionic Emission ◽  
Low Frequency ◽  
Charge Trapping ◽  
Emission Model ◽  
Zero Bias ◽  
Current Voltage ◽  
Zno Varistors ◽  
Dc Current

ABSTRACTMuch of the research on ZnO varistors has concentrated on the explanation of their dc current-voltage characteristics. However, varistors also have unusual ac properties which can be technologically important, and must be described by any comprehensive model. In an ideal varistor with identical grain boundaries throughout, there should be no dispersive capacitance at zero bias. In real varistors this capacitance varies considerably with frequency. This dispersion has two causes, charge trapping in the depletion regions and differing grain boundary barriers. Calculations for each process are given. For voltages well below the varistor breakdown value, the low frequency capacitance increases with applied voltage. At even higher voltages the capacitance turns over and becomes negative. All of these effects can be described with a double depletion layer/thermionic emission model. The anomalous capacitance behavior with bias is due to the modulation of the potential barriers by charge trapping at the grain boundaries. In the varistor breakdown regime minority carriers created by impact ionization are important.

Composition and Properties of PECVD Silicon Nitride Films Deposited from SiH4, N2, He Gases

1991 ◽  
Vol 219 ◽  
Author(s):  
J. H. Souk ◽  
G. N. Parsons ◽  
J. Batey
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Etch Rate ◽  
Charge Trapping ◽  
Film Stress ◽  
Bond Density ◽  
Silicon Nitride Films ◽  
Current Voltage ◽  
Optical And Mechanical Properties ◽  
Wet Etch

ABSTRACTAmorphous silicon nitride films deposited from a gas mixture of SiH4 and N2 with a large flow of He have shown many interesting characteristics. The films show a wide variety of electrical, optical, and mechanical properties with varying amounts of SiH4 and N2. The effect of N2 flow rate on film composition in N2-SiH4 processes is quite different from that of NH3 flow in NH3-SiH4 processes. The films were characterized by measurements of (1) Si-H and N-H bond density and bonded hydrogen content, both from infrared absorption, (2) Si/N ratio, (3) refractive index, (4) film stress, and (5) wet chemical etch rate and (6) electrical properties including current-voltage (I-V) and capacitance-voltage (C-V). We find that adding helium to the PECVD process enhances the incorporation of nitrogen in the film and an optimized flow of SiH4 improves the electrical properties. Films with optimum electrical properties with minimum charge trapping are obtained with N/Si ratio close to 1.33. These films have a small amount of Si-H and N-H bonds, and a low etch rate (> 100 A/min) in aqueous HF solution. The properties of these low temperature (250°C) PECVD nitrides have many similarities with LPCVD nitrides. Compared with films deposited from SiH4, NH3 mixture, these films exhibit very low wet etch rates and much lower H contents, but greater hysteresis in C-V characteristics.

Electric Charge Trapping and Transport at Medium Fields in Low-Density Polyethylene

2005 ◽  
Vol 480-481 ◽  
pp. 495-500
Author(s):  
José N. Marat-Mendes ◽  
Eugen R. Neagu ◽  
Rodica M. Neagu
Keyword(s):  
Time Lag ◽  
Charge Trapping ◽  
Voltage Characteristic ◽  
Low Density Polyethylene ◽  
Low Density ◽  
Current Voltage Characteristic ◽  
Current Increase ◽  
Ohmic Behavior ◽  
N2 Atmosphere ◽  
Current Voltage

The transient conductivity in low-density polyethylene is studied. Isochronal currentvoltage measurements for 1800 s and 1 day time intervals are carried out under dry N2 atmosphere. When after every measurement the sample is fully discharged at high temperature the isochronal current - voltage characteristic reveals an ohmic behavior. When the next field increase is applied without sample discharging the current-voltage characteristic is super-quadratic. We explain this increase of the current assuming that a fraction of the previous injected charge is detrapped by the field and it contributes to current increase. Consequently the current – voltage characteristic is strongly dependent on the time lag between two successive rises in the field. Neither the Poole-Frenkel mechanism nor the Richardson – Schottky mechanism can by used to explain the experimental results. The isothermal charging and discharging currents are explained assuming the movement of injected/ejected charge in the resultant local field. The values obtained for the adjustable parameters of the model are in good agreement with the values in the literature.

scholarly journals Silver Nanoparticle-Doped Titanium Oxide Thin Films for Intermediate Layers in Organic Tandem Solar Cell

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Wanyi Nie ◽  
Robert C. Coffin ◽  
David L. Carroll
Keyword(s):  
Cell Structure ◽  
Charge Trapping ◽  
Simple Approach ◽  
Organic Photovoltaic ◽  
Ag Nanoparticle ◽  
Tandem Solar Cell ◽  
Intermediate Layers ◽  
Current Voltage ◽  
Nanoparticle Content ◽  
Interfacial Charge

In this work we investigate the Ag nanoparticle doping of TiOx used as an intermediate layer between subcells of a tandem organic photovoltaic. We use a model polymer cell structure of P3HT:TiOx:PEDOT:P3HT to observe charge-trapping effects as a function of nanoparticle content in the TiOx, as determined by the shape of the dark and illuminated current voltage curves of the devices. There is a direct correlation between the amount of Ag nanoparticles in the TiOx, and interfacial charge buildup, and charge trapping being completely mitigated at around 0.2% mol. This suggests that such doping schemes might provide a simple approach to the creation and use of TiOx layers for tandem cells.

Sign in / Sign up

Export Citation Format

Share Document