Magnetoresonant Raman scattering in zinc-blende-type semiconductors: Electron-phonon interaction mediated by a deformation potential

1997 ◽  
Vol 56 (24) ◽  
pp. 15691-15700 ◽  
Author(s):  
V. López ◽  
G. E. Marques ◽  
J. Drake ◽  
C. Trallero-Giner
1963 ◽  
Vol 41 (11) ◽  
pp. 1823-1835 ◽  
Author(s):  
Robert Barrie ◽  
Kyoji Nishikawa

The general theory of the phonon broadening of impurity spectral lines discussed in an earlier paper is applied to shallow impurity levels in silicon. With the use of a modified hydrogenic model and a deformation potential description of the electron–phonon interaction, expressions are obtained for typical contributions to the half-widths. Some numerical estimations are made for both acceptor and donor cases and are compared with experiment.


1993 ◽  
Vol 48 (11) ◽  
pp. 8412-8417 ◽  
Author(s):  
Ping Zhou ◽  
Kai-An Wang ◽  
P. C. Eklund ◽  
G. Dresselhaus ◽  
M. S. Dresselhaus

1980 ◽  
Vol 33 (10) ◽  
pp. 1079-1082 ◽  
Author(s):  
K.P. Jain ◽  
S. Nakashima ◽  
M. Jouanne ◽  
E. Amzallag ◽  
M. Balkanski

JETP Letters ◽  
2015 ◽  
Vol 102 (8) ◽  
pp. 503-507 ◽  
Author(s):  
Yu. S. Ponosov ◽  
A. A. Makhnev ◽  
S. V. Streltsov ◽  
V. B. Filippov ◽  
N. Yu. Shitsevalova

2000 ◽  
Vol 62 (6) ◽  
pp. 4142-4147 ◽  
Author(s):  
Shigeki Nimori ◽  
Shigenobu Sakita ◽  
Fumihiko Nakamura ◽  
Toshizo Fujita ◽  
Hiroaki Hata ◽  
...  

1999 ◽  
Vol 259-261 ◽  
pp. 542-543 ◽  
Author(s):  
S. Nimori ◽  
H. Hata ◽  
N. Ogita ◽  
S. Sakita ◽  
N. Kikugawa ◽  
...  

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