Evidence of internal electric fields inGaInP2by scanning capacitance and near-field scanning optical microscopy

1997 ◽  
Vol 56 (3) ◽  
pp. 1472-1478 ◽  
Author(s):  
J-K. Leong ◽  
C. C. Williams ◽  
J. M. Olson
1999 ◽  
Vol 588 ◽  
Author(s):  
Charles Paulson ◽  
Brian Hawkins ◽  
Jingxi Sun ◽  
Arthur B. Ellis ◽  
Leon Mccaughan ◽  
...  

AbstractA novel Near-field Scanning Optical Microscopy (NSOM) technique is used to obtain simultaneous topology, photoluminescence and photoreflectance (PR) spectra. PR spectra from GaAs surfaces were obtained and the local electric fields were calculated. Sub-wavelength resolution is expected for this technique and achieved for PL and topology measurements. Photovoltages, resulting from the high intensity of light at the NSOM tip, can limit the spatial resolution of the electric field determination.


1995 ◽  
Vol 67 (17) ◽  
pp. 2483-2485 ◽  
Author(s):  
C. L. Jahncke ◽  
M. A. Paesler ◽  
H. D. Hallen

1995 ◽  
Vol 61 (1-4) ◽  
pp. 291-294 ◽  
Author(s):  
Patrick J. Moyer ◽  
Stefan Kämmer ◽  
Karsten Walzer ◽  
Michael Hietschold

2004 ◽  
Vol 1 (9) ◽  
pp. 2292-2297 ◽  
Author(s):  
E. E. van Dyk ◽  
A. Karoui ◽  
A. H. La Rosa ◽  
G. Rozgonyi

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