Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate

1997 ◽  
Vol 56 (16) ◽  
pp. 10089-10096 ◽  
Author(s):  
N. G. Ptitsina ◽  
G. M. Chulkova ◽  
K. S. Il’in ◽  
A. V. Sergeev ◽  
F. S. Pochinkov ◽  
...  
1994 ◽  
Vol 08 (07) ◽  
pp. 935-941 ◽  
Author(s):  
V. HEUCKEROTH ◽  
D. BENNHARDT ◽  
P. THOMAS ◽  
H. VAUPEL

Optical phase coherence can be destroyed by various interaction mechanisms, including scattering by static disorder, electron-phonon interaction and interaction among the optical excitations. The electron-phonon interaction strongly depends on the nature of the electronic states, which in turn is determined by the static disorder. It also gives rise to hopping and phonon-induced delocalization, i.e. to transport. However, there is no one-to-one correspondence between transport processes and dephasing processes in general. Only for strongly localized states can the dephasing rate be identified with the hopping rate. A general formulation of the problem is given and illustrated in terms of a simple model system.


2018 ◽  
Vol 30 (12) ◽  
pp. 3-16
Author(s):  
A. Berezin ◽  
◽  
Yu. Volkov ◽  
M. Markov ◽  
I. Tarakanov ◽  
...  

1989 ◽  
Vol 162 (3) ◽  
pp. 217-220 ◽  
Author(s):  
S. Saikan ◽  
A. Imaoka ◽  
Y. Kanematsu ◽  
T. Kishida

Author(s):  
I. Yu. Sklyadneva ◽  
Rolf Heid ◽  
Pedro Miguel Echenique ◽  
Evgueni Chulkov

Electron-phonon interaction in the Si(111)-supported rectangular √(7 ) ×√3 phases of In is investigated within the density-functional theory and linear-response. For both single-layer and double-layer √(7 ) ×√3 structures, it...


Sign in / Sign up

Export Citation Format

Share Document