scholarly journals Electromagnetic microwaves in metal films with electron-phonon interaction and a dc magnetic field

1976 ◽  
Vol 13 (6) ◽  
pp. 2324-2330
Author(s):  
L. E. Hasselberg
Keyword(s):  
Magnetic Field ◽  
Metal Films ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Dc Magnetic Field

Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate

1997 ◽  
Vol 56 (16) ◽  
pp. 10089-10096 ◽  
Author(s):  
N. G. Ptitsina ◽  
G. M. Chulkova ◽  
K. S. Il’in ◽  
A. V. Sergeev ◽  
F. S. Pochinkov ◽  
...  
Keyword(s):  
Metal Films ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Dephasing Rate

Noise Equivalent Power of Graphene–Superconductor-Based Optical Sensor

2017 ◽  
Vol 16 (01) ◽  
pp. 1750006
Author(s):  
B. Afkhami Aghda ◽  
A. Moftakharzadeh ◽  
M. Hosseini
Keyword(s):  
Magnetic Field ◽  
Optical Sensors ◽  
Operation Mode ◽  
Noise Equivalent Power ◽  
Direct Relation ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Device Resistance ◽  
Conductivity Electron ◽  
The Magnetic Field

In this paper, the noise equivalent power (NEP) of optical sensors based on graphene–superconductor junctions in the voltage bias operation mode has been calculated. The effects of device parameters such as temperature, magnetic field and device resistance on the NEP of these detectors have been thoroughly investigated. By solving the related equations, graphene specific heat, thermal conductivity, electron–phonon interaction and responsivity of the detector have been obtained. Using the calculated parameters, the NEP of the device was obtained. The results show that at constant magnetic field the NEP will increase linearly by increasing device temperature. On the other hand, at constant temperature the behavior of NEP versus magnetic field is first increasing and then decreasing. Our calculations show that the optimal resistance of the device has a direct relation with respect to the device temperature, while in the investigated operating range the optimal resistance of device is almost independent of the magnetic field.

OPTICAL PROPERTIES OF ACCEPTORS IN SEMIMAGNETIC QUANTUM WELL SYSTEMS

2002 ◽  
Vol 16 (25) ◽  
pp. 3737-3757 ◽  
Author(s):  
Sr. GERARDIN JAYAM ◽  
K. NAVANEETHAKRISHNAN
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Quantum Well ◽  
Cross Sections ◽  
Empirical Relationship ◽  
Phonon Interaction ◽  
Shallow Acceptor ◽  
Electron Phonon Interaction ◽  
The Magnetic Field ◽  
Confined Phonons

The binding energy of a shallow acceptor in an isolated quantum well of the CdTe / Cd 1-x Mn x Te system has been investigated in an external magnetic field, assuming an empirical relationship between the barrier height and the magnetic field. Photoionization cross-sections for different magnetic fields have been estimated. Taking into account the confined phonons in the electron-phonon interaction, carrier capture times for various magnetic fields and different hydrostatic pressures have been computed. The results obtained are discussed in the light of the existing literature.

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