Electron scattering by optical phonons inAlxGa1−xAs/GaAs/AlxGa1−xAs quantum wells

1997 ◽  
Vol 55 (24) ◽  
pp. 16324-16330 ◽  
Author(s):  
X. Zianni ◽  
C. D. Simserides ◽  
G. P. Triberis
Keyword(s):  
Quantum Wells ◽  
Electron Scattering ◽  
Optical Phonons

scholarly journals Electron scattering and capture rates in quantum wells by emission of hybrid optical phonons

2001 ◽  
Vol 63 (20) ◽  
Author(s):  
V. N. Stavrou ◽  
C. R. Bennett ◽  
O. M. M. Al-Dossary ◽  
M. Babiker
Keyword(s):  
Quantum Wells ◽  
Electron Scattering ◽  
Optical Phonons ◽  
Capture Rates

Energy-dependent electron scattering via interaction with optical phonons in wurtzite crystals and quantum wells

2000 ◽  
Vol 61 (3) ◽  
pp. 2034-2040 ◽  
Author(s):  
S. M. Komirenko ◽  
K. W. Kim ◽  
M. A. Stroscio ◽  
M. Dutta
Keyword(s):  
Quantum Wells ◽  
Electron Scattering ◽  
Optical Phonons ◽  
Energy Dependent

Generation of TeraHertz radiation assisted by optical phonons in nitride-based quantum wells and heterolayers

2008 ◽  
Vol 5 (1) ◽  
pp. 236-239
Author(s):  
P. Shiktorov ◽  
E. Starikov ◽  
V. Gružinskis ◽  
L. Varani ◽  
C. Palermo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Terahertz Radiation ◽  
Optical Phonons

Trion dephasing by electron scattering in GaAs/AlAs quantum wells

1996 ◽  
Vol 13 (7) ◽  
pp. 1372 ◽  
Author(s):  
A. Manassen ◽  
E. Cohen ◽  
Arza Ron ◽  
E. Linder ◽  
L. N. Pfeiffer
Keyword(s):  
Quantum Wells ◽  
Electron Scattering

scholarly journals Многократное изменение электрон-фононного взаимодействия в квантовых ямах с диэлектрически различными барьерами

2022 ◽  
Vol 56 (1) ◽  
pp. 101
Author(s):  
А.Ю. Маслов ◽  
О.В. Прошина
Keyword(s):  
Quantum Wells ◽  
Charged Particles ◽  
Strong Interactions ◽  
Asymmetric Structure ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Barrier Materials ◽  
Electron Phonon Interaction ◽  
Order Of Magnitude

Abstract The specific features of the interaction of charged particles with polar optical phonons have been studied theoretically for quantum wells with the barriers that are asymmetric in their dielectric properties. It is shown that the interaction with interface phonon modes makes the greatest contribution in narrow quantum wells. The parameters of the electron-phonon interaction were found for the cases of different values of the phonon frequencies in the barrier materials. It turned out that a significant (by almost an order of magnitude) change in the parameters of the electron-phonon interaction can occur in such structures. This makes it possible, in principle, to trace the transition from weak to strong interactions in quantum wells of the same type but with different compositions of barrier materials. The conditions are found under which an enhancement of the electron-phonon interaction is possible in an asymmetric structure in comparison with a symmetric one with the barriers of the same composition.

Free-carrier screening of the interaction between excitons and longitudinal-optical phonons inInxGa1−xAs-InP quantum wells

1987 ◽  
Vol 35 (11) ◽  
pp. 5925-5928 ◽  
Author(s):  
M. S. Skolnick ◽  
K. J. Nash ◽  
P. R. Tapster ◽  
D. J. Mowbray ◽  
S. J. Bass ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Longitudinal Optical ◽  
Carrier Screening ◽  
Free Carrier ◽  
Optical Phonons
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