Nanoscale determination of phase velocity by scanning acoustic force microscopy

1997 ◽  
Vol 55 (23) ◽  
pp. 15852-15855 ◽  
Author(s):  
E. Chilla ◽  
T. Hesjedal ◽  
H. -J. Fröhlich
2003 ◽  
Vol 779 ◽  
Author(s):  
David Christopher ◽  
Steven Kenny ◽  
Roger Smith ◽  
Asta Richter ◽  
Bodo Wolf ◽  
...  

AbstractThe pile up patterns arising in nanoindentation are shown to be indicative of the sample crystal symmetry. To explain and interpret these patterns, complementary molecular dynamics simulations and experiments have been performed to determine the atomistic mechanisms of the nanoindentation process in single crystal Fe{110}. The simulations show that dislocation loops start from the tip and end on the crystal surface propagating outwards along the four in-plane <111> directions. These loops carry material away from the indenter and form bumps on the surface along these directions separated from the piled-up material around the indenter hole. Atoms also move in the two out-of-plane <111> directions causing propagation of subsurface defects and pile-up around the hole. This finding is confirmed by scanning force microscopy mapping of the imprint, the piling-up pattern proving a suitable indicator of the surface crystallography. Experimental force-depth curves over the depth range of a few nanometers do not appear smooth and show distinct pop-ins. On the sub-nanometer scale these pop-ins are also visible in the simulation curves and occur as a result of the initiation of the dislocation loops from the tip.


1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.


2015 ◽  
Vol 1754 ◽  
pp. 69-74
Author(s):  
Ravi Gaikwad ◽  
Tinu Abraham ◽  
Aharnish Hande ◽  
Fatemeh Bakhtiari ◽  
Siddhartha Das ◽  
...  

ABSTRACTAtomic force microscopy is employed to study the structural changes in the morphology and physical characteristics of asphaltene aggregates as a function of temperature. The exotic fractal structure obtained by evaporation-driven asphaltene aggregates shows an interesting dynamics for a large range of temperatures from 25°C to 80°C. The changes in the topography, surface potential and adhesion are unnoticeable until 70°C. However, a significant change in the dynamics and material properties is displayed in the range of 70°C - 80°C, during which the aspahltene aggregates acquire ‘liquid-like’ mobility and fuse together. This behaviour is attributed to the transition from the pure amorphous phase to a crystalline liquid phase which occurs at approximately 70°C as shown by using Differential Scanning Calorimetry (DSC). Additionally, the charged nature of asphaltenes and bitumen is also explored using kelvin probe microscopy. Such observations can lead to the development of a rational approach to the fundamental understanding of asphaltene aggregation dynamics and may help in devising novel techniques for the handling and separation of asphaltene aggregates using dielectrophoretic methods.


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