Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells

1996 ◽  
Vol 54 (4) ◽  
pp. 2733-2738 ◽  
Author(s):  
U. Jahn ◽  
S. H. Kwok ◽  
M. Ramsteiner ◽  
R. Hey ◽  
H. T. Grahn ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interface Roughness ◽  
Photoluminescence Spectra ◽  
Exciton Localization

scholarly journals Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells

2000 ◽  
Vol 61 (15) ◽  
pp. 10322-10329 ◽  
Author(s):  
K. Leosson ◽  
J. R. Jensen ◽  
W. Langbein ◽  
J. M. Hvam
Keyword(s):  
Quantum Wells ◽  
Interface Roughness ◽  
Exciton Localization

Investigation of Roughness at InP/InAs Interfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
M. C. Tamargo ◽  
S. Schwarz
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Mass Spectroscopy ◽  
Growth Temperature ◽  
Interface Roughness ◽  
Chemical Beam Epitaxy ◽  
Photoluminescence Spectra ◽  
Multiple Line ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe have investigated the interface roughness of single thin InP/InAs quantum wells grown by Chemical Beam Epitaxy. We report results of low temperature photoluminescence and secondary ion mass spectroscopy. The interface roughness is characterized by multiple-line photoluminescence spectra and is very sensitive to parameters such as the growth temperature. Details of the interface roughness are discussed based on the shifts of the excitonic energies observed by photoluminescence.

Microroughness and exciton localization in (Al,Ga)As/GaAs quantum wells

1997 ◽  
Vol 55 (8) ◽  
pp. 5253-5258 ◽  
Author(s):  
R. Grousson ◽  
V. Voliotis ◽  
N. Grandjean ◽  
J. Massies ◽  
M. Leroux ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Exciton Localization

Exciton localization inInxGa1−xAs/GaAs quantum wells observed by temperature-modulated photoluminescence

1991 ◽  
Vol 43 (2) ◽  
pp. 1546-1550 ◽  
Author(s):  
M. Gal ◽  
Z. Y. Xu ◽  
F. Green ◽  
B. F. Usher
Keyword(s):  
Quantum Wells ◽  
Exciton Localization

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Exciton localization in group-III nitride quantum wells

1999 ◽  
Vol 59 (15) ◽  
pp. 9783-9786 ◽  
Author(s):  
V. I. Litvinov ◽  
M. Razeghi
Keyword(s):  
Quantum Wells ◽  
Group Iii ◽  
Exciton Localization ◽  
Group Iii Nitride

Evidence of Interface Roughness Correlation in CdTe/(Cd, Zn)Te Quantum Wells

1996 ◽  
pp. 275-277
Author(s):  
E. J. Mayer ◽  
N. T. Pelekanos ◽  
J. Kuhl ◽  
N. Magnea ◽  
H. Mariette
Keyword(s):  
Quantum Wells ◽  
Interface Roughness
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