High-pressure study of optical transitions in strainedIn0.2Ga0.8As/GaAs multiple quantum wells

1996 ◽  
Vol 54 (19) ◽  
pp. 13820-13826 ◽  
Author(s):  
G. H. Li ◽  
A. R. Goñi ◽  
K. Syassen ◽  
H. Q. Hou ◽  
W. Feng ◽  
...  
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
High Pressure Study

Identification of the L-Band in InxGa1−xP/In)0.5Al0.5P Multiple Quantum Wells from High Pressure Measurement

1996 ◽  
Vol 198 (1) ◽  
pp. 337-341 ◽  
Author(s):  
D. Patel ◽  
K. Interholzinger ◽  
P. Thiagarajan ◽  
G. Y. Robinson ◽  
C. S. Menoni
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Pressure Measurement ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
L Band

High-pressure photoluminescence study of GaAs/GaAs1−xPxstrained multiple quantum wells

1993 ◽  
Vol 47 (7) ◽  
pp. 3765-3770 ◽  
Author(s):  
W. Shan ◽  
S. J. Hwang ◽  
J. J. Song ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Study

Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure

1994 ◽  
Vol 358 ◽  
Author(s):  
Z.P. Wang ◽  
Z.X. Liu ◽  
H.X. Han ◽  
J.Q. Zhang ◽  
G.H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Liquid Nitrogen Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Short Period ◽  
Heavy Hole Subband ◽  
Photoluminescence Studies ◽  
Increasing Temperature

ABSTRACTWe have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).

Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Time Resolved ◽  
Metal Organic ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTTime-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy

1996 ◽  
Vol 69 (17) ◽  
pp. 2453-2455 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Salvador ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Transitions
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