High-pressure photoluminescence study of GaAs/GaAs1−xPxstrained multiple quantum wells

1993 ◽  
Vol 47 (7) ◽  
pp. 3765-3770 ◽  
Author(s):  
W. Shan ◽  
S. J. Hwang ◽  
J. J. Song ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Study

Identification of the L-Band in InxGa1−xP/In)0.5Al0.5P Multiple Quantum Wells from High Pressure Measurement

1996 ◽  
Vol 198 (1) ◽  
pp. 337-341 ◽  
Author(s):  
D. Patel ◽  
K. Interholzinger ◽  
P. Thiagarajan ◽  
G. Y. Robinson ◽  
C. S. Menoni
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Pressure Measurement ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
L Band

Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure

1994 ◽  
Vol 358 ◽  
Author(s):  
Z.P. Wang ◽  
Z.X. Liu ◽  
H.X. Han ◽  
J.Q. Zhang ◽  
G.H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Liquid Nitrogen Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Short Period ◽  
Heavy Hole Subband ◽  
Photoluminescence Studies ◽  
Increasing Temperature

ABSTRACTWe have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).

A low-temperature photoluminescence study of GaAs1-xNx/GaAs multiple quantum wells

2017 ◽  
Author(s):  
M. Biswas ◽  
A. Balgarkashi ◽  
S. Singh ◽  
N. Shinde ◽  
R. L. Makkar ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Study ◽  
Low Temperature Photoluminescence

Photoluminescence study of acceptor states in n-type, modulation doped GaAs/AlGaAs multiple quantum wells

1984 ◽  
Vol 52 (2) ◽  
pp. 93-97 ◽  
Author(s):  
A. Petrou ◽  
M.C. Smith ◽  
C.H. Perry ◽  
J.M. Worlock ◽  
R.L. Aggarwal
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Study

Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells

2004 ◽  
Vol 241 (5) ◽  
pp. 1124-1133 ◽  
Author(s):  
H. Haratizadeh ◽  
B. Monemar ◽  
P. P. Paskov ◽  
P. O. Holtz ◽  
G. Pozina ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Photoluminescence and Raman Scattering from (CdSe)m,(ZnSe)n-ZnSe Multiple Quantum Wells Under Hydrostatic Pressure

1995 ◽  
Vol 406 ◽  
Author(s):  
J. Q. Zhang ◽  
Z. X. Liu ◽  
Z. P. Wang ◽  
H. X. Han ◽  
G. H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phonon Modes ◽  
Quantum Well Structure

AbstractThe photoluminescence and Raman scattering of {|(CdSe)1 (ZnSe)3|14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations have been accomplished by turning the electronic levels under hydrostatic high pressure. Two kind of excitons and ZnSe-like LO phonon modes as well as their pressure behavior are presented.

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