scholarly journals Dependence of magnetization reversal on the crystallite size in MnBi thin films: Experiment, theory, and computer simulation

1996 ◽  
Vol 54 (18) ◽  
pp. 13017-13019 ◽  
Author(s):  
U. Nowak ◽  
U. Rüdiger ◽  
P. Fumagalli ◽  
G. Güntherodt
2005 ◽  
Vol 480-481 ◽  
pp. 477-481 ◽  
Author(s):  
J.R. Ares ◽  
A. Pascual ◽  
I.J. Ferrer ◽  
C. Sánchez
Keyword(s):  

2019 ◽  
Vol 48 (6) ◽  
pp. 473-480 ◽  
Author(s):  
Umi Zalilah Mohamad Zaidi ◽  
A.R. Bushroa ◽  
Reza Rahbari Ghahnavyeh ◽  
Reza Mahmoodian

Purpose This paper aims to determine the crystallite size and microstrain values of AgSiN thin films using potential approach called approximation method. This method can be used as a replacement for other determination methods such as Williamson-Hall (W-H) plot and Warren-Averbach analysis. Design/methodology/approach The monolayer AgSiN thin films on Ti6Al4V alloy were fabricated using magnetron sputtering technique. To evaluate the crystallite size and microstrain values, the thin films were deposited under different bias voltage (−75, −150 and −200 V). X-ray diffraction (XRD) broadening profile along with approximation method were used to determine the crystallite size and microstrain values. The reliability of the method was proved by comparing it with scanning electron microscopy graph and W-H plot method. The second parameters’ microstrain obtained was used to project the residual stress present in the thin films. Further discussion on the thin films was done by relating the residual stress with the adhesion strength and the thickness of the films. Findings XRD-approximation method results revealed that the crystallite size values obtained from the method were in a good agreement when it is compared with Scherer formula and W-H method. Meanwhile, the calculations for thin films corresponding residual stresses were correlated well with scratch adhesion critical loads with the lowest residual stress was noted for sample with lowest microstrain and has thickest thickness among the three samples. Practical implications The fabricated thin films were intended to be used in antibacterial applications. Originality/value Up to the knowledge from literature review, there are no reports on depositing AgSiN on Ti6Al4V alloy via magnetron sputtering to elucidate the crystallite size and microstrain properties using the approximation method.


1991 ◽  
Vol 15 (2) ◽  
pp. 93-96 ◽  
Author(s):  
O. Ishii ◽  
F. Yoshimura ◽  
S. Hirono

1998 ◽  
Vol 57 (23) ◽  
pp. 14990-14998 ◽  
Author(s):  
A. Khapikov ◽  
L. Uspenskaya ◽  
J. Ebothe ◽  
S. Vilain

2010 ◽  
Vol 108 (10) ◽  
pp. 103906 ◽  
Author(s):  
Hans Boschker ◽  
Jaap Kautz ◽  
Evert P. Houwman ◽  
Gertjan Koster ◽  
Dave H. A. Blank ◽  
...  

2020 ◽  
Vol 2020 ◽  
pp. 1-9
Author(s):  
Tizazu Abza ◽  
Dereje Gelanu Dadi ◽  
Fekadu Gashaw Hone ◽  
Tesfaye Chebelew Meharu ◽  
Gebremeskel Tekle ◽  
...  

Cobalt sulfide thin films were synthesized from acidic chemical baths by varying the deposition time. The powder X-ray diffraction studies indicated that there are hexagonal CoS, face-centered cubic Co3S4, and cubic Co9S8 phases of cobalt sulfide. The crystallite size of the hexagonal CoS phase decreased from 52.8 nm to 22.5 nm and that of the cubic Co9S8 phase increased from 11 nm to 60 nm as the deposition time increased from 2 hrs to 3.5 hrs. The scanning electron microscopic images revealed crack and pinhole free thin films with uniform and smooth background and few large polygonal grains on the surface. The band gap of the cobalt sulfide thin films decreased from 1.75 eV to 1.3 eV as the deposition time increased from 2 hrs to 3.5 hrs. The photoluminescence (PL) spectra of the films confirmed the emission of ultraviolet, violet, and blue lights. The intense PL emission of violet light at 384 nm had red shifted with increasing deposition time that could be resulted from the increase in the average crystallite size. The FTIR spectra of the films indicated the presence of OH, C-O-H, C-O, double sulfide, and Co-S groups. As the deposition time increased, the electrical resistivity of the cobalt sulfide thin films decreased due to the increase in both the crystallite size and the films’ thickness.


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