Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap

1996 ◽  
Vol 54 (15) ◽  
pp. 10257-10260 ◽  
Author(s):  
C. Persson ◽  
U. Lindefelt
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Fundamental Band

Band Structure and Thermoelectric Properties of Ni(x)Zn(1-x)Fe2O4

2021 ◽  
Vol 317 ◽  
pp. 28-34
Author(s):  
Joon Hoong Lim
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Xrd Analysis ◽  
Valence Band Maximum ◽  
Solid State Method ◽  
Ni Content

Thermoelectric materials has made a great potential in sustainable energy industries, which enable the energy conversion from heat to electricity. The band structure and thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 have been investigated. The bulk pellets were prepared from analytical grade ZnO, NiO and Fe2O3 powder using solid-state method. It was possible to obtain high thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 by controlling the ratios of dopants and the sintering temperature. XRD analysis showed that the fabricated samples have a single phase formation of cubic spinel structure. The thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 pellets improved with increasing Ni. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 (x = 0.0) is (0.515 x10-3 Scm-1). The band structure shows that ZnxCu1-xFe2O4 is an indirect band gap material with the valence band maximum (VBM) at M and conduction band minimum (CBM) at A. The band gap of Ni(x)Zn(1-x)Fe2O4 increased with increasing Ni content. The increasing band gap correlated with the lower electrical conductivity. The thermal conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The presence of Ni served to decrease thermal conductivity by 8 Wm-1K-1 over pure samples. The magnitude of the Seebeck coefficient for Ni(x)Zn(1-x)Fe2O4 pellets increased with increasing amounts of Ni. The figure of merit for Ni(x)Zn(1-x)Fe2O4 pellets and thin films was improved by increasing Ni due to its high Seebeck coefficient and low thermal conductivity.

CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER Si ADSORPTION

2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Surface State ◽  
Core Level ◽  
Clean Surface ◽  
Core Level Spectrum ◽  
Surface Band ◽  
Surface Electronic Structure

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

The composition and temperature dependences of the fundamental band gap in ZnSxSe1−x alloys

1979 ◽  
Vol 86 ◽  
pp. 378-383 ◽  
Author(s):  
L. Soonckindt ◽  
D. Etienne ◽  
J.P. Marchand ◽  
L. Lassabatere
Keyword(s):  
Band Gap ◽  
Fundamental Band ◽  
Temperature Dependences

scholarly journals Accurate Prediction of Band Structure of FeS2: A Hard Quest of Advanced First-Principles Approaches

2021 ◽  
Vol 9 ◽  
Author(s):  
Min-Ye Zhang ◽  
Hong Jiang
Keyword(s):  
Band Structure ◽  
First Principles ◽  
High Energy ◽  
Accurate Prediction ◽  
Band Gaps ◽  
Full Potential ◽  
Band Structures ◽  
Electronic Band ◽  
Fundamental Band ◽  
Hybrid Functionals

The pyrite and marcasite polymorphs of FeS2 have attracted considerable interests for their potential applications in optoelectronic devices because of their appropriate electronic and optical properties. Controversies regarding their fundamental band gaps remain in both experimental and theoretical materials research of FeS2. In this work, we present a systematic theoretical investigation into the electronic band structures of the two polymorphs by using many-body perturbation theory with the GW approximation implemented in the full-potential linearized augmented plane waves (FP-LAPW) framework. By comparing the quasi-particle (QP) band structures computed with the conventional LAPW basis and the one extended by high-energy local orbitals (HLOs), denoted as LAPW + HLOs, we find that one-shot or partially self-consistent GW (G0W0 and GW0, respectively) on top of the Perdew-Burke-Ernzerhof (PBE) generalized gradient approximation with a converged LAPW + HLOs basis is able to remedy the artifact reported in the previous GW calculations, and leads to overall good agreement with experiment for the fundamental band gaps of the two polymorphs. Density of states calculated from G0W0@PBE with the converged LAPW + HLOs basis agrees well with the energy distribution curves from photo-electron spectroscopy for pyrite. We have also investigated the performances of several hybrid functionals, which were previously shown to be able to predict band gaps of many insulating systems with accuracy close or comparable to GW. It is shown that the hybrid functionals considered in general fail badly to describe the band structures of FeS2 polymorphs. This work indicates that accurate prediction of electronic band structure of FeS2 poses a stringent test on state-of-the-art first-principles approaches, and the G0W0 method based on semi-local approximation performs well for this difficult system if it is practiced with well-converged numerical accuracy.

Fabrication of Two-Dimensional Photonic Band Structure with Near-Infrared Band Gap

1994 ◽  
Vol 33 (Part 2, No. 10B) ◽  
pp. L1463-L1465 ◽  
Author(s):  
Kuon Inoue ◽  
Mitsuo Wada ◽  
Kazuaki Sakoda ◽  
Akio Yamanaka ◽  
Masaki Hayashi ◽  
...  
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Near Infrared ◽  
Two Dimensional ◽  
Photonic Band Structure ◽  
Infrared Band ◽  
Photonic Band

Magneto-optical properties of theGaxIn1−xSesystem near the fundamental band gap

1984 ◽  
Vol 30 (4) ◽  
pp. 1957-1961 ◽  
Author(s):  
G. Saintonge ◽  
J. L. Brebner
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Fundamental Band

The band gap properties of the three-component semi-infinite plate-like LRPC by using PWE/FE method

2018 ◽  
Vol 32 (16) ◽  
pp. 1850173
Author(s):  
Denghui Qian ◽  
Jianchun Wang
Keyword(s):  
Finite Element ◽  
Band Structure ◽  
Band Gap ◽  
Phononic Crystal ◽  
Infinite Plate ◽  
Frequency Range ◽  
Fe Method ◽  
Mass Model ◽  
Rubber Layer ◽  
The Matrix

This paper applies coupled plane wave expansion and finite element (PWE/FE) method to calculate the band structure of the proposed three-component semi-infinite plate-like locally resonant phononic crystal (LRPC). In order to verify the accuracy of the result, the band structure calculated by PWE/FE method is compared to that calculated by the traditional finite element (FE) method, and the frequency range of the band gap in the band structure is compared to that of the attenuation in the transmission power spectrum. Numerical results and further analysis demonstrate that a band gap is opened by the coupling between the dominant vibrations of the rubber layer and the matrix modes. In addition, the influences of the geometry parameters on the band gap are studied and understood with the help of the simple “base-spring-mass” model, the influence of the viscidity of rubber layer on the band gap is also investigated.

Nanostructure Dependence of the Electronic Conductivity of Carbon Nanotubes and Graphene Sheets

2010 ◽  
Author(s):  
Masato Ohnishi ◽  
Katsuya Ohsaki ◽  
Yusuke Suzuki ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Aspect Ratio ◽  
Band Structure ◽  
Band Gap ◽  
Critical Strain ◽  
Electronic Band Structure ◽  
Electronic Conductivity ◽  
Membered Ring ◽  
Applied Strain ◽  
Dominant Factor ◽  
Electronic Band

In this study, the change of the resistivity of the CNT-dispersed resin was analyzed by applying a quantum chemical molecular dynamics and the first principle calculation. Various combinations of double-walled carbon nanotube structures were modeled for the analysis. The change of the band structure was calculated by changing the amplitude of the applied strain. It was found in some cases that the band structure changes drastically from a metallic structure to a semiconductive structure, and this result clearly indicated that the electronic conductivity of this MWCNT decreased significantly under tensile strain. It was also found that further application of the strain made a band gap in the band structure. This result indicated that the metallic CNT changes a semiconductive CNT due to the applied strain. The effect of the diameter of the zigzag type CNT on the critical strain of buckling deformation was analyzed under a uni-axial strain. In this analysis, the aspect ratio of each structure was fixed at 10. It was found that the critical strain decreased monotonically with the increase of the diameter. This was because that the flexural rigidity of a cylinder decreased with the increase of its diameter when the thickness of the wall of the cylinder is fixed. It was found that the critical strain decreased drastically from about 5% to 0.5% when the aspect ratio was changed from 10 to 30. Since the typical aspect ratio of CNTs often exceeds 1000, most CNTs show buckling deformation when an axial compressive strain was applied to the CNTs. Finally, the shape of six-membered ring of the CNT was found to be the dominant factor that determines the electronic band structure of a CNT. Next, the change of the band structure of a graphene sheet was analyzed by applying the abinitio calculation (Density functional theory). It was found that the fluctuation of the atomic distance among the six-membered ring is the most dominant factor of the electronic band structure. When the fluctuation exceeded about 10%, band gap appeared in the deformed six-membered ring, and thus, the electronic conductivity of the graphene sheet changes from metallic one to semiconductive one. It is therefore, possible to predict the change of the electronic conductivity of a CNT by considering the local shape of a six-membered ring in the deformed CNT.

Sign in / Sign up

Export Citation Format

Share Document