Thermoelectric power of high-pressure synthesizedCuBa2Ca3Cu4O11−δ

1996 ◽  
Vol 53 (9) ◽  
pp. 5170-5173 ◽  
Author(s):  
C.-J. Liu ◽  
C.-Q. Jin ◽  
H. Yamauchi
Keyword(s):  
High Pressure ◽  
Thermoelectric Power

Thermoelectric power of sulphur at high pressure up to 40 GPa

2003 ◽  
Vol 239 (2) ◽  
pp. 399-404 ◽  
Author(s):  
Vladimir V. Shchennikov ◽  
Sergey V. Ovsyannikov
Keyword(s):  
High Pressure ◽  
Thermoelectric Power

A technique for thermoelectric power measurements at high pressure in an octahedral multianvil press

2000 ◽  
Vol 71 (8) ◽  
pp. 3138-3140 ◽  
Author(s):  
D. A. Polvani ◽  
Y. Fei ◽  
J. F. Meng ◽  
J. V. Badding
Keyword(s):  
High Pressure ◽  
Thermoelectric Power ◽  
Power Measurements

RESISTIVE ANOMALIES AT NEAR 250 K IN Hg-Ca-Cu-O AND Fe-S SYSTEMS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3755-3757
Author(s):  
S. S. YOM ◽  
JONG-KU PARK ◽  
G. H. KIM ◽  
H. S. KIM ◽  
J. Y. LEE ◽  
...  
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Magnetic Susceptibility ◽  
Mechanical Alloying ◽  
Thermoelectric Power ◽  
Thermal Hysteresis ◽  
Unknown Origin ◽  
Synthesis Condition ◽  
Nominal Composition ◽  
Rapid Drop

High pressure synthesized samples of nominal composition of Ca 2-x Hg x CuO y with x=0.10~0.20 under reductive synthesis condition showed stable and reproducible resistivity onset transition at 225~254 K accompanied by rapid drop of thermoelectric power without accompanying magnetic susceptibility transition. Fe 1-x S ( x =0) by mechanical alloying method showed resistivity anomaly and thermal hysteresis at 150~180 K. These resistive anomalies may be phase transition of unknown origin rather than an indication of superconductivity.

Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure

CrystEngComm ◽  
2020 ◽  
Vol 22 (33) ◽  
pp. 5416-5435
Author(s):  
Natalia V. Morozova ◽  
Igor V. Korobeinikov ◽  
Nikolay V. Abrosimov ◽  
Sergey V. Ovsyannikov
Keyword(s):  
High Pressure ◽  
Thermoelectric Power ◽  
Silicon Germanium ◽  
Next Generation ◽  
Crystalline Phases ◽  
Nanoelectronic Devices ◽  
Electronic Junctions ◽  
Silicon Germanium Alloys

Si–Ge crystals are promising materials for use in various stress-controlled electronic junctions for next-generation nanoelectronic devices.

Thermoelectric power of nickel and ytterbium at high pressure: a comparative study

2000 ◽  
Vol 116 (8) ◽  
pp. 443-445 ◽  
Author(s):  
N.V Chandra Shekar ◽  
J.F Meng ◽  
D.A Polvani ◽  
J.V Badding
Keyword(s):  
High Pressure ◽  
Comparative Study ◽  
Thermoelectric Power

The thermoelectric power of CePd2Si2 and CeCu2Ge2 at very high pressure

1996 ◽  
Vol 225 (3-4) ◽  
pp. 207-213 ◽  
Author(s):  
P. Link ◽  
D. Jaccard ◽  
P. Lejay
Keyword(s):  
High Pressure ◽  
Thermoelectric Power ◽  
Very High

A phase transition in Ga2Se3 under high pressure

1994 ◽  
Vol 72 (9-10) ◽  
pp. 681-682 ◽  
Author(s):  
K. V. Savchenko ◽  
V. V. Shchennikov
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Thermoelectric Power ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Vickers Microhardness ◽  
Zinc Blende ◽  
Stockbarger Method ◽  
Zinc Blende Structure ◽  
Semiconductor Type

Ga2Se3 crystals with an excess of Se were grown by the Bridgman–Stockbarger method and had a defect zinc blende structure with a0 = 5.42 Å [Formula: see text] (1 Å = 10−10 m). At room temperature the resistivity was equal to (4.5 ± 1.5) × 1011 Ω cm, the thermoelectric power was (−1.1 ± 0.1) mV K−1 and the Vickers microhardness was (357 ± 9) kg mm−2. The gamma-induced conductivity was measured in the gamma-emitting power range of 3–340 rad s−1. Pressure dependencies of electrical resistance and thermoelectric power at room temperature allowed us to determine a phase transition of the semiconductor–semiconductor type at 14.2 GPa.

Effect of High Pressure on the Thermoelectric Power and Electrical Resistance of Aluminum and Gold

1968 ◽  
Vol 165 (3) ◽  
pp. 853-864 ◽  
Author(s):  
R. R. Bourassa ◽  
D. Lazarus ◽  
D. A. Blackburn
Keyword(s):  
High Pressure ◽  
Thermoelectric Power ◽  
Electrical Resistance

Influence of High Pressure Torsion on Thermoelastic and Thermoelectric Response of Pure Copper and Aluminum under Pulsed Laser Radiation

2018 ◽  
Vol 385 ◽  
pp. 296-301
Author(s):  
Ivan V. Smirnov ◽  
Yuri V. Sudenkov
Keyword(s):  
High Pressure ◽  
Laser Radiation ◽  
Thermoelectric Power ◽  
High Pressure Torsion ◽  
Pure Aluminum ◽  
Pure Copper ◽  
Reference Sample ◽  
Pulsed Laser ◽  
Coarse Grained ◽  
Pulsed Laser Radiation

This work presents experimental studying the effect of processing by severe plastic deformation (SPD) on the thermoelastic and thermoelectric properties of pure aluminum and copper under pulsed laser radiation. The studies were carried out on technical aluminum AD1 (99.3%) and pure copper M1 (99.9%). High pressure torsion (HPT) was used for processing by SPD. After the HPT processing, the materials samples in the form of a plane disk were subjected to pulsed laser radiation focused on the disk center. Pulsed lasers with a wavelength of 1.06 micron and operating in the free laser oscillation mode with pulse duration of 100 microseconds or in the mode of a single pulse with duration of about 10 nanoseconds were used. The thermoelastic and thermoelectric responses of the materials were determined by measuring acoustic waves and the thermoelectric power. The disks with the initial coarse-grained material state were considered as a reference sample, and the disks of the materials after SPD processing were considered as a controlled object. The results demonstrated a very high sensitivity of the parameters of thermoelastic and thermoelectric response to structural changes in the materials. For example, the used HPT mode led to a reduction in the maximum thermoelectric power value for aluminum by 40% and for copper by 35%.

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