Observation of Fano resonance in heavily dopedp-type silicon at room temperature

1995 ◽  
Vol 52 (8) ◽  
pp. 5672-5674 ◽  
Author(s):  
A. W. Simonian ◽  
A. B. Sproul ◽  
Z. Shi ◽  
E. Gauja
Keyword(s):  
Fano Resonance ◽  
Room Temperature ◽  
Type Silicon

scholarly journals Room temperature continuous-wave excited biexciton emission in perovskite nanoplatelets via plasmonic nonlinear fano resonance

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
Jie Chen ◽  
Qing Zhang ◽  
Jia Shi ◽  
Shuai Zhang ◽  
Wenna Du ◽  
...  
Keyword(s):  
Fano Resonance ◽  
Room Temperature ◽  
Continuous Wave

DLTS studies of defects produced in n-type silicon by hydrogen implantation at low temperature

2002 ◽  
Vol 744 ◽  
Author(s):  
Takahide Sugiyama ◽  
Masayasu Ishiko ◽  
Shigeki Kanazawa ◽  
Yutaka Tokuda
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Room Temperature ◽  
Reverse Bias ◽  
Thermal Emission ◽  
Sample Temperature ◽  
Zero Bias ◽  
Type Silicon ◽  
Projected Range ◽  
Hydrogen Implantation

ABSTRACTMetastable defects are discovered in hydrogen-implanted n-type silicon. Hydrogen implantation was performed with the energy of 80 keV to a dose of 2×10 cm- at 109 K. After implantation, the sample temperature was raised to room temperature. DLTS measurements were carried out in the temperature range 80–290 K for fabricated diodes. When the sample is reverse-biased at 10V for 10 min at room temperature and then is cooled down to 80 K, three new peaks labeled EM1, EM2 and EM3 appear around 150, 190 and 240 K, respectively. The introduction of metastable defects is found to be characteristic of low temperature implantation. We have evaluated properties of EM1 in detail. EM1 with thermal emission activation energy of 0.29 eV has a peak in concentration around the depth of 0.64 μ m, which corresponds to the projected range of 80 keV hydrogen. EM1 is regenerated with the reverse bias applied around 270 K and is removed with the zero bias around 220 K.

In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K

1998 ◽  
Vol 532 ◽  
Author(s):  
C. R. Cho ◽  
R. A. Brown ◽  
O. Kononchuk ◽  
N. Yarykin ◽  
G. Rozgonyi ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Temperature Range ◽  
Type Silicon ◽  
Defect Annealing ◽  
Interstitial Defects ◽  
Transient Spectroscopy ◽  
Dlts Spectra

ABSTRACTThe evolution of defects in Czochralski and epitaxial p- and n-type silicon wafers following irradiation with He. Si or Ge ions at 80 K has been investigated by in situ deep level transient spectroscopy (DLTS). Defect annealing and formation reactions have been observed over the temperature range 80–350 K. In p-type silicon, new species-dependent levels are observed immediately after implantation, but these levels anneal out at or below room temperature. The wellknown divacancy and interstitial defects, usually reported after room temperature implantation, are revealed in the DLTS spectra only upon annealing at 160–200 K. In n-type silicon, vacancy-oxygen pairs are observed immediately after implantation. However, vacancy-related defects continue to form over a broad temperature range in samples implanted with Si or Ge. These observations are consistent with a model whereby vacancies and interstitials are released from defect clusters at temperatures >200 K to form divacancies and other defect pairs which are stable at room temperature.

Influence of Hf and H2O2 on Morphology of Silicon Formed by Ag Assisted Chemical Etching

2014 ◽  
Vol 953-954 ◽  
pp. 1045-1048
Author(s):  
Guo Feng Ma ◽  
Heng Ye ◽  
Hong Lin Zhang ◽  
Chun Lin He ◽  
Li Na Sun
Keyword(s):  
Silicon Substrate ◽  
Room Temperature ◽  
Electroless Deposition ◽  
Metal Salt ◽  
Substrate Surface ◽  
Volume Ratio ◽  
Type Silicon ◽  
P Type ◽  
Silicon Substrate Surface ◽  
Si Wafer

The Ag-assisted electroless etching of p-type silicon substrate in HF/H2O2solution at room temperature was investigated. In this work, the effects of HF, H2O2and their volume ratio on morphology and growth of p-type silicon substrate surface by using metal assisted etching were investigated in order to produce a highly efficient antireflecting structure. The Ag metal particles were deposited onto Si wafer by electroless deposition from a metal salt solution including HF. The experimental results show that the growth rate and morphology of the pores formed on the Ag metalized Si surfaces are strongly dependent on the volume ratio of HF and H2O2.

scholarly journals Dark Excitons: Dark‐Exciton‐Mediated Fano Resonance from a Single Gold Nanostructure on Monolayer WS 2 at Room Temperature (Small 31/2019)

Small ◽  
2019 ◽  
Vol 15 (31) ◽  
pp. 1970164
Author(s):  
Mingsong Wang ◽  
Zilong Wu ◽  
Alex Krasnok ◽  
Tianyi Zhang ◽  
Mingzu Liu ◽  
...  
Keyword(s):  
Fano Resonance ◽  
Room Temperature ◽  
Gold Nanostructure ◽  
Dark Exciton

Anodic electrode reaction of p-type silicon in 1-ethyl-3-methylimidazolium fluorohydrogenate room-temperature ionic liquid

2008 ◽  
Vol 53 (10) ◽  
pp. 3650-3655 ◽  
Author(s):  
Tetsuya Tsuda ◽  
Toshiyuki Nohira ◽  
Koji Amezawa ◽  
Kan Hachiya ◽  
Rika Hagiwara ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Room Temperature ◽  
Electrode Reaction ◽  
Room Temperature Ionic Liquid ◽  
Type Silicon ◽  
P Type

Defect Reaction and Electrical Properties of Iron in N-Type Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Hajime Kitagawa ◽  
Shuji Tanaka
Keyword(s):  
Room Temperature ◽  
Isothermal Annealing ◽  
Consecutive Reaction ◽  
Type Silicon ◽  
Related Donor ◽  
And Diffusion ◽  
Donor Character ◽  
Annealing Experiments ◽  
Defect Reaction ◽  
Diffusion Properties

AbstractSince the first report by our group in 1992, iron-related defects in n-type silicon has been found to exhibit unusual in-diffusion and annealing properties. We review in this paper the recent progress in understanding the electrical and diffusion properties of iron-related defects in n-type silicon. We have shown from DLTS and Hall effect that iron in n-type silicon is electrically ionized and introduce one donor level at Ec-0.41 eV (level C) and, at least, one acceptor level at Ec-0.21 eV (level B). The donor character of former level has been confirmed by a Poole-Frenkel effect. The concentrations of two centers introduced are in the order of 1013 cm−3 at maxima. In-diffusion behavior of levels B and C show that these levels are intermediate states in a consecutive reaction of iron-related complex formation. Low-temperature isothermal annealing experiments from the room temperature to 200°C suggest that iron-related donor is formed, in part, by the electrostatic attractive force between two point charges.

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