Optical intersubband transitions in conduction-band quantum wells

1995 ◽  
Vol 52 (16) ◽  
pp. 11958-11968 ◽  
Author(s):  
Rui Q. Yang
2001 ◽  
Vol 692 ◽  
Author(s):  
Qiaoying Zhou ◽  
M. O. Manasreh ◽  
B. D. Weaver ◽  
M. Missous

AbstractIntersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Å. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.


1994 ◽  
Vol 50 (11) ◽  
pp. 7474-7482 ◽  
Author(s):  
Rui Q. Yang ◽  
J. M. Xu ◽  
Mark Sweeny

2009 ◽  
Vol 95 (5) ◽  
pp. 051918 ◽  
Author(s):  
M. De Seta ◽  
G. Capellini ◽  
Y. Busby ◽  
F. Evangelisti ◽  
M. Ortolani ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-179-C5-182
Author(s):  
K. BAJEMA ◽  
R. MERLIN ◽  
F.-Y. JUANG ◽  
S.-C. HONG ◽  
J. SINGH ◽  
...  

Optik ◽  
2016 ◽  
Vol 127 (11) ◽  
pp. 4903-4908 ◽  
Author(s):  
Melek Msahli ◽  
Hosni Saidi ◽  
Amira Ben Ahmed ◽  
Said Ridene ◽  
Habib Bouchriha

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