STARK EFFECT IN QUANTUM WELLS : RAMAN SCATTERING BY INTERSUBBAND TRANSITIONS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-179-C5-182
Author(s):  
K. BAJEMA ◽  
R. MERLIN ◽  
F.-Y. JUANG ◽  
S.-C. HONG ◽  
J. SINGH ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Stark Effect ◽  
Intersubband Transitions

Stark effect in GaAs-AlxGa1−xAs quantum wells: Light scattering by intersubband transitions

1987 ◽  
Vol 36 (2) ◽  
pp. 1300-1302 ◽  
Author(s):  
K. Bajema ◽  
R. Merlin ◽  
F.-Y. Juang ◽  
S.-C. Hong ◽  
J. Singh ◽  
...  
Keyword(s):  
Light Scattering ◽  
Quantum Wells ◽  
Stark Effect ◽  
Intersubband Transitions

Intersubband Transitions in Asymmetric Quantum Wells with External Electric Field

2014 ◽  
Vol 525 ◽  
pp. 170-176
Author(s):  
Zhao Xu Liu ◽  
Jun Zhu ◽  
Si Hua Ha
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
External Electric Field ◽  
Electric Fields ◽  
Stark Effect ◽  
Energy Levels ◽  
Intersubband Transitions ◽  
External Electric Fields ◽  
Asymmetric Quantum ◽  
Negative Field

The quantum-confined Stark effect on the optical absorption of intersubband transitions in an asymmetric AlxGa1-xN/In0.3Ga0.7N/GaN quantum wells is investigated by means of the density matrix formulism. The built-in electric field generated by the piezoelectric and spontaneous polarizations competing against to the external electric fields is considered. As the result, the influences of the built-in and external electric fields on the energy potentials and the eigen stares are discussed in detail. When the positive external electric field is applied, the peak values of the absorption coefficients from 3-2, 2-1 and 3-1 transitions are reduced and moved to the lower photon energy levels. With the negative field, the exactly opposite results can be obtained. Moreover, it is indicated that the results of the wavelengths from the 3-2, 2-1 and 3-1 transitions are reduced by the positive external electric field and increased by the negative field.

Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells

2003 ◽  
Vol 0 (7) ◽  
pp. 2662-2665 ◽  
Author(s):  
M. P. Halsall ◽  
B. Sherliker ◽  
P. Harrison ◽  
V. D. Jovanović ◽  
D. Indjin ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Intersubband Transitions ◽  
Electronic Raman Scattering

QUANTUM CONFINED STARK EFFECT ON INTERSUBBAND TRANSITIONS IN STRAINED WURTZITE NITRIDE QUANTUM WELLS

2011 ◽  
Vol 25 (22) ◽  
pp. 1847-1854 ◽  
Author(s):  
SI HUA HA ◽  
SHI LIANG BAN ◽  
JUN ZHU
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Stark Effect ◽  
Lattice Mismatch ◽  
Thermal Strain ◽  
Band Gaps ◽  
Level System ◽  
Intersubband Transitions ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

The quantum confined Stark effect on the optical absorption of intersubband transitions in nitride quantum wells is investigated by means of the density matrix formulism. The built-in electric field, which is caused by the piezoelectric polarization produced by the lattice mismatch and thermal strain, and by the spontaneous polarization, is taken into account. The three-energy-level system is obtained by designing a quantum-well structure composed by two barriers with different band gaps. For example, the corresponding wavelengths for 1–2, 1–3 and 2–3 transitions in an Al 0.5 Ga 0.5 N / In 0.3 Ga 0.7 N / GaN quantum well with the well width of 5 nm are calculated as 1.84 μm, 0.95 μm and 2.24 μm, respectively. Moreover, they decrease with increasing the Al composition of left barrier.

Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering

1995 ◽  
Vol 51 (15) ◽  
pp. 9786-9790 ◽  
Author(s):  
J. Wagner ◽  
J. Schmitz ◽  
F. Fuchs ◽  
J. D. Ralston ◽  
P. Koidl ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Intersubband Transitions ◽  
Resonant Raman ◽  
Resonant Raman Scattering

RESONANT RAMAN SCATTERING AND EXCITON-PHONON INTERACTION IN CdTe / (Cd,Mn)Te QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-345-C5-348
Author(s):  
S.-K. CHANG ◽  
H. NAKATA ◽  
A. V. NURMIKKO ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Interaction ◽  
Resonant Raman ◽  
Resonant Raman Scattering

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

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