Balance equations for hot-electron transport in a general energy band in crossed magnetic and electric fields

1995 ◽  
Vol 51 (8) ◽  
pp. 5184-5191 ◽  
Author(s):  
X. L. Lei
Keyword(s):  
Electron Transport ◽  
Electric Fields ◽  
Energy Band ◽  
Hot Electron ◽  
Balance Equations ◽  
General Energy ◽  
Hot Electron Transport

scholarly journals HOT-ELECTRON TRANSPORT IN QUANTUM-DOT PHOTODETECTORS

2008 ◽  
Vol 18 (04) ◽  
pp. 1013-1022 ◽  
Author(s):  
L. H. CHIEN ◽  
A. SERGEEV ◽  
N. VAGIDOV ◽  
V. MITIN
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Electric Field ◽  
Electric Fields ◽  
Hot Electron ◽  
Potential Relief ◽  
Potential Barriers ◽  
Electron Kinetics ◽  
Unintentional Doping ◽  
Hot Electron Transport

Employing Monte-Carlo simulations we investigate effects of an electric field on electron kinetics and transport in quantum-dot structures with potential barriers created around dots via intentional or unintentional doping. Results of our simulations demonstrate that the photoelectron capture is substantially enhanced in strong electric fields and this process has an exponential character. Detailed analysis shows that effects of the electric field on electron capture in the structures with barriers are not sensitive to the redistribution of electrons between valleys and these effects are not related to an increase of drift velocity. Most data find adequate explanation in the model of hot-electron transport in the potential relief of quantum dots. Electron kinetics controllable by potential barriers and an electric field may provide significant improvements in the photoconductive gain, detectivity, and responsivity of photodetectors.

Electron transport in AlN under high electric fields

2001 ◽  
Vol 693 ◽  
Author(s):  
Ramón Collazo ◽  
Raoul Schlesser ◽  
Amy Roskowski ◽  
Robert F. Davis ◽  
Z. Sitar
Keyword(s):  
Electron Transport ◽  
Energy Distribution ◽  
Electric Fields ◽  
Applied Field ◽  
Electron Velocity ◽  
Hot Electron ◽  
Energy Position ◽  
Aln Film ◽  
High Electric Fields ◽  
Hot Electron Transport

AbstractThe energy distribution of electrons transported through an intrinsic AlN film was directly measured as a function of the applied field, and AlN film thickness. Following the transport, electrons were extracted into vacuum through a semitransparent Au electrode and their energy distribution was measured using an electron spectrometer. Transport through films thicker than 95 nm and applied field between 200 kV/cm -350 kV/cm occurred as steady-state hot electron transport represented by a Maxwellian energy distribution, with a corresponding carrier temperature. At higher fields (470 kV/cm), intervalley scattering was evidenced by a multi-component energy distribution with a second peak at the energy position of the first satellite valley. Electron transport through films thinner than 95 nm demonstrated velocity overshoot under fields greater than 550 kV/cm. This was evidenced by a symmetric energy distribution centered at an energy above the conduction band minimum. This indicated that the drift component of the electron velocity was on the order of the “thermal” component. A transient length of less than 80 nm was deduced from these observations.

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