Nonequilibrium dynamics of hot-electron transport in strong electric fields

1992 ◽  
Vol 46 (11) ◽  
pp. 6768-6776 ◽  
Author(s):  
Henry H. K. Tang
Keyword(s):  
Electron Transport ◽  
Electric Fields ◽  
Nonequilibrium Dynamics ◽  
Hot Electron ◽  
Strong Electric Fields ◽  
Hot Electron Transport

scholarly journals HOT-ELECTRON TRANSPORT IN QUANTUM-DOT PHOTODETECTORS

2008 ◽  
Vol 18 (04) ◽  
pp. 1013-1022 ◽  
Author(s):  
L. H. CHIEN ◽  
A. SERGEEV ◽  
N. VAGIDOV ◽  
V. MITIN
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Electric Field ◽  
Electric Fields ◽  
Hot Electron ◽  
Potential Relief ◽  
Potential Barriers ◽  
Electron Kinetics ◽  
Unintentional Doping ◽  
Hot Electron Transport

Employing Monte-Carlo simulations we investigate effects of an electric field on electron kinetics and transport in quantum-dot structures with potential barriers created around dots via intentional or unintentional doping. Results of our simulations demonstrate that the photoelectron capture is substantially enhanced in strong electric fields and this process has an exponential character. Detailed analysis shows that effects of the electric field on electron capture in the structures with barriers are not sensitive to the redistribution of electrons between valleys and these effects are not related to an increase of drift velocity. Most data find adequate explanation in the model of hot-electron transport in the potential relief of quantum dots. Electron kinetics controllable by potential barriers and an electric field may provide significant improvements in the photoconductive gain, detectivity, and responsivity of photodetectors.

Electron transport in AlN under high electric fields

2001 ◽  
Vol 693 ◽  
Author(s):  
Ramón Collazo ◽  
Raoul Schlesser ◽  
Amy Roskowski ◽  
Robert F. Davis ◽  
Z. Sitar
Keyword(s):  
Electron Transport ◽  
Energy Distribution ◽  
Electric Fields ◽  
Applied Field ◽  
Electron Velocity ◽  
Hot Electron ◽  
Energy Position ◽  
Aln Film ◽  
High Electric Fields ◽  
Hot Electron Transport

AbstractThe energy distribution of electrons transported through an intrinsic AlN film was directly measured as a function of the applied field, and AlN film thickness. Following the transport, electrons were extracted into vacuum through a semitransparent Au electrode and their energy distribution was measured using an electron spectrometer. Transport through films thicker than 95 nm and applied field between 200 kV/cm -350 kV/cm occurred as steady-state hot electron transport represented by a Maxwellian energy distribution, with a corresponding carrier temperature. At higher fields (470 kV/cm), intervalley scattering was evidenced by a multi-component energy distribution with a second peak at the energy position of the first satellite valley. Electron transport through films thinner than 95 nm demonstrated velocity overshoot under fields greater than 550 kV/cm. This was evidenced by a symmetric energy distribution centered at an energy above the conduction band minimum. This indicated that the drift component of the electron velocity was on the order of the “thermal” component. A transient length of less than 80 nm was deduced from these observations.

scholarly journals Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

2017 ◽  
Vol 56 (4) ◽  
pp. 217-222
Author(s):  
Linas Ardaravičius ◽  
Oleg Kiprijanovič ◽  
Juozapas Liberis
Keyword(s):  
Electron Transport ◽  
Electric Fields ◽  
Electron Density Profile ◽  
Electron Velocity ◽  
Hot Electron ◽  
Optimal Frequency ◽  
Hot Phonons ◽  
Gan Heterostructure ◽  
Hot Electron Transport ◽  
Coupled Channel

Longitudinal hot-electron transport is investigated for the alloy-free AlGaN/AlN/{GaN/AlN/GaN} heterostructure at electric fields up to 380 kV/cm. The structure featured a coupled channel with a camelback electron density profile. The hot-electron drift velocity in the coupled channel is estimated as ~1.5×107 cm/s and is ~50% higher as compared with the standard AlN-spacer GaN 2DEG channel. The HFET with the pristine 2DEG density of 1.75×1013 cm–2 confined in the coupled channel demonstrates the optimal frequency performance in terms of electron velocity at a relatively low gate bias of VGS = –1.75 V. These results are consistent with the ultra-fast decay of hot phonons.

Hot electron transport effects in lead telluride

1976 ◽  
Vol 20 (11) ◽  
pp. 1089-1095 ◽  
Author(s):  
G.P. Carver ◽  
B.B. Houston ◽  
J.R. Burke ◽  
D.K. Ferry
Keyword(s):  
Electron Transport ◽  
Lead Telluride ◽  
Hot Electron ◽  
Transport Effects ◽  
Hot Electron Transport

Hot-electron transport for many-valley semiconductors by the method of nonequilibrium statistical operators

1988 ◽  
Vol 37 (6) ◽  
pp. 2997-3007 ◽  
Author(s):  
M. Liu ◽  
D. Y. Xing ◽  
C. S. Ting ◽  
W. T. Xu
Keyword(s):  
Electron Transport ◽  
Hot Electron ◽  
Hot Electron Transport

Hot-electron transport in GaAs-AlGaAs heterojunctions

1986 ◽  
Vol 33 (6) ◽  
pp. 4382-4385 ◽  
Author(s):  
X. L. Lei ◽  
J. Q. Zhang ◽  
Joseph L. Birman ◽  
C. S. Ting
Keyword(s):  
Electron Transport ◽  
Hot Electron ◽  
Hot Electron Transport
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