Hydrogen passivation ofEL2 defects andH2*-like complex formation in gallium arsenide

1995 ◽  
Vol 51 (7) ◽  
pp. 4172-4175 ◽  
Author(s):  
A. Amore Bonapasta
Keyword(s):  
Gallium Arsenide ◽  
Complex Formation ◽  
Hydrogen Passivation

Passivation of N-Type Silicon by Hydrogen

1987 ◽  
Vol 104 ◽  
Author(s):  
K. Bergman ◽  
Michael Stavola ◽  
S. J. Pearton ◽  
J. Lopata
Keyword(s):  
Infrared Spectroscopy ◽  
Complex Formation ◽  
Heat Treatments ◽  
Hydrogen Passivation ◽  
Absorption Bands ◽  
Type Silicon

ABSTRACTInfrared spectroscopy has been used to study hydrogen passivation of P, As, and Sb donors in Si. The spectra show several new absorption bands due to donor-H complexes. By comparing spectra after different heat treatments it is shown directly that the passivation is due to complex formation.

Hydrogen passivation of grain boundaries in polycrystalline gallium arsenide

1983 ◽  
Vol 54 (2) ◽  
pp. 1154-1155 ◽  
Author(s):  
S. J. Pearton ◽  
A. J. Tavendale
Keyword(s):  
Gallium Arsenide ◽  
Grain Boundaries ◽  
Hydrogen Passivation

Doping and impurity-vacancy complex formation during vapour-phase epitaxy of gallium arsenide

1992 ◽  
Vol 123 (3-4) ◽  
pp. 529-536 ◽  
Author(s):  
I.A. Bobrovnikova ◽  
L.G. Lavrent'eva ◽  
M.P. Rusaikin ◽  
M.D. Vilisova
Keyword(s):  
Gallium Arsenide ◽  
Complex Formation ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Vacancy Complex

Hydrogen passivation of carbon-doped gallium arsenide

1993 ◽  
Vol 48 (12) ◽  
pp. 8771-8779 ◽  
Author(s):  
A. Amore Bonapasta
Keyword(s):  
Gallium Arsenide ◽  
Hydrogen Passivation ◽  
Carbon Doped

Comparative Labelling and Biokinetic Studies of 99mTc-EDTA(Sn) and 99mTc-DTPA(Sn)

1977 ◽  
Vol 16 (01) ◽  
pp. 30-35 ◽  
Author(s):  
N. Agha ◽  
R. B. R. Persson
Keyword(s):  
Complex Formation ◽  
Significant Influence ◽  
Room Temperature ◽  
Ph Value ◽  
Maximum Activity ◽  
Reduction Step ◽  
Labelling Yield ◽  
Different Temperatures ◽  
Kinetics Of

SummaryGelchromatography column scanning has been used to study the fractions of 99mTc-pertechnetate, 99mTcchelate and reduced hydrolyzed 99mTc in preparations of 99mTc-EDTA(Sn) and 99mTc-DTPA(Sn). The labelling yield of 99mTc-EDTA(Sn) chelate was as high as 90—95% when 100 μmol EDTA · H4 and 0.5 (Amol SnCl2 was incubated with 10 ml 99mTceluate for 30—60 min at room temperature. The study of the influence of the pH-value on the fraction of 99mTc-EDTA shows that pH 2.8—2.9 gave the best labelling yield. In a comparative study of the labelling kinetics of 99mTc-EDTA(Sn) and 99mTc- DTPA(Sn) at different temperatures (7, 22 and 37°C), no significant influence on the reduction step was found. The rate constant for complex formation, however, increased more rapidly with increased temperature for 99mTc-DTPA(Sn). At room temperature only a few minutes was required to achieve a high labelling yield with 99mTc-DTPA(Sn) whereas about 60 min was required for 99mTc-EDTA(Sn). Comparative biokinetic studies in rabbits showed that the maximum activity in kidneys is achieved after 12 min with 99mTc-EDTA(Sn) but already after 6 min with 99mTc-DTPA(Sn). The long-term disappearance of 99mTc-DTPA(Sn) from the kidneys is about five times faster than that for 99mTc-EDTA(Sn).

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