Iron exchange-field penetration into the amorphous interphase of nanocrystalline materials

1995 ◽  
Vol 51 (5) ◽  
pp. 3281-3284 ◽  
Author(s):  
A. Hernando ◽  
I. Navarro ◽  
P. Gorría
2007 ◽  
Vol 438 (1-2) ◽  
pp. 15-20 ◽  
Author(s):  
D. Prabhu ◽  
A. Narayanasamy ◽  
K. Ganesan ◽  
N. Ponpandian ◽  
K. Chattopadhyay

1998 ◽  
Vol 58 (18) ◽  
pp. 12147-12158 ◽  
Author(s):  
J. S. Garitaonandia ◽  
D. S. Schmool ◽  
J. M. Barandiarán

2003 ◽  
Vol 777 ◽  
Author(s):  
T. Devolder ◽  
M. Belmeguenai ◽  
C. Chappert ◽  
H. Bernas ◽  
Y. Suzuki

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.


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