Free-electron-like Hall effect and deviations from free-electron behavior in Ca-Al amorphous alloys

1995 ◽  
Vol 51 (21) ◽  
pp. 15567-15568 ◽  
Author(s):  
F. M. Mayeya ◽  
B. J. Hickey ◽  
M. A. Howson
1980 ◽  
Vol 41 (C8) ◽  
pp. C8-467-C8-469 ◽  
Author(s):  
R. Asomoza ◽  
J. B. Bieri ◽  
A. Fert ◽  
B. Boucher ◽  
J. C. Ousset

1976 ◽  
Vol 26 (2) ◽  
pp. 208-214 ◽  
Author(s):  
P. Butvin ◽  
P. Duhaj
Keyword(s):  

2005 ◽  
Vol 483-485 ◽  
pp. 441-444 ◽  
Author(s):  
Michael Krieger ◽  
Gerhard Pensl ◽  
Mietek Bakowski ◽  
Adolf Schöner ◽  
Hiroyuki Nagasawa ◽  
...  

Temperature-dependent Hall effect investigations in the channel of lateral 3C-SiC LDDMOSFETs with nitrogen(N)-implanted source/drain regions are conducted. The free electron concentration and the electron Hall mobility are independently determined. A maximum electron Hall mobility of 75 cm2/Vs is observed. The gate oxide withstands electric field strengths up to 5 MV/cm. A high density of interface states of a few 1013 cm-2eV-1 close to the 3C-SiC conduction band edge still lowers the performance of the MOS device.


1994 ◽  
Vol 185 (2) ◽  
pp. 455-464 ◽  
Author(s):  
K. Bärner ◽  
K. Heinemann ◽  
I. V. Medvedeva
Keyword(s):  

1976 ◽  
Vol 26 (4) ◽  
pp. 469-476 ◽  
Author(s):  
P. Butvin ◽  
P. Duhaj
Keyword(s):  

2006 ◽  
Vol 73 (23) ◽  
Author(s):  
Toru Hirahara ◽  
Iwao Matsuda ◽  
Canhua Liu ◽  
Rei Hobara ◽  
Shinya Yoshimoto ◽  
...  

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