Direct measurement of the Hall effect in a free-electron-like surface state

2006 ◽  
Vol 73 (23) ◽  
Author(s):  
Toru Hirahara ◽  
Iwao Matsuda ◽  
Canhua Liu ◽  
Rei Hobara ◽  
Shinya Yoshimoto ◽  
...  
2005 ◽  
Vol 483-485 ◽  
pp. 441-444 ◽  
Author(s):  
Michael Krieger ◽  
Gerhard Pensl ◽  
Mietek Bakowski ◽  
Adolf Schöner ◽  
Hiroyuki Nagasawa ◽  
...  

Temperature-dependent Hall effect investigations in the channel of lateral 3C-SiC LDDMOSFETs with nitrogen(N)-implanted source/drain regions are conducted. The free electron concentration and the electron Hall mobility are independently determined. A maximum electron Hall mobility of 75 cm2/Vs is observed. The gate oxide withstands electric field strengths up to 5 MV/cm. A high density of interface states of a few 1013 cm-2eV-1 close to the 3C-SiC conduction band edge still lowers the performance of the MOS device.


1972 ◽  
Vol 6 (4) ◽  
pp. 1142-1144 ◽  
Author(s):  
Leonard Kleinman
Keyword(s):  

2002 ◽  
Vol 14 (35) ◽  
pp. 8379-8392 ◽  
Author(s):  
Shuji Hasegawa ◽  
Ichiro Shiraki ◽  
Takehiro Tanikawa ◽  
Christian L Petersen ◽  
Torben M Hansen ◽  
...  

Nano Letters ◽  
2014 ◽  
Vol 14 (12) ◽  
pp. 6754-6760 ◽  
Author(s):  
Dong Liang ◽  
Miguel Cabán-Acevedo ◽  
Nicholas S. Kaiser ◽  
Song Jin

1960 ◽  
Vol 37 (3) ◽  
pp. 100-103
Author(s):  
S C Ryder-smith ◽  
A E Guile ◽  
A E Barrington

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