Orientation as a key parameter in the valence-subband-structure engineering of quantum wells

1995 ◽  
Vol 51 (16) ◽  
pp. 10857-10868 ◽  
Author(s):  
G. Shechter ◽  
L. D. Shvartsman ◽  
J. E. Golub
Keyword(s):  
Quantum Wells ◽  
Structure Engineering ◽  
Key Parameter ◽  
Subband Structure

Valence-Subband Structure of Strained Quantum Wells

1995 ◽  
Vol 34 (Part 1, No. 6A) ◽  
pp. 3043-3050 ◽  
Author(s):  
Matsuto Ogawa ◽  
Tanroku Miyoshi
Keyword(s):  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Subband Structure

PECULIARITIES OF ELECTRON TRANSPORT IN THE COUPLED AlGaAs/GaAs QUANTUM WELLS WITH THIN CENTRAL AlAs BARRIER

2003 ◽  
Vol 02 (06) ◽  
pp. 565-573
Author(s):  
V. A. KULBACHINSKII ◽  
R. A. LUNIN ◽  
I. S. VASIL'EVSKII ◽  
G. B. GALIEV ◽  
V. G. MOKEROV ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Energy Structure ◽  
High Magnetic Fields ◽  
Single Quantum Well ◽  
Coupled Quantum Wells ◽  
Self Consistent ◽  
L 13 ◽  
Subband Structure

GaAs / AlGaAs structures with single quantum well (QW) of different width and with coupled quantum wells separated by central barrier of six monolayers of AlAs have been synthesized by MBE. The temperature dependence of resistance, Hall electron concentration and mobility were investigated in the temperature interval 4.2 K <T<300 K . Shubnikov–de Haas (SdH) oscillations and quantum Hall effect were also investigated in high magnetic fields up to 38 T. The influence of thin central barrier on the subband energy structure and electron mobility was analyzed for three values of QW width L=13, 26 and 35 nm. Self-consistent calculations of the subband structure and envelope wave function were carried out.

Hole subband structure and mobility calculations of double p-type d-doped GaAs quantum wells

2005 ◽  
Vol 2 (10) ◽  
pp. 3637-3640
Author(s):  
I. Rodriguez-Vargas ◽  
L. M. Gaggero-Sager
Keyword(s):  
Quantum Wells ◽  
Type D ◽  
P Type ◽  
Subband Structure

Valence subband structure and optical gain of GaAs-AlGaAs (111) quantum wells

1989 ◽  
Vol 4 (11) ◽  
pp. 904-909 ◽  
Author(s):  
W Batty ◽  
U Ekenberg ◽  
A Ghit ◽  
E P O'Reilly
Keyword(s):  
Quantum Wells ◽  
Optical Gain ◽  
Subband Structure

TEMPERATURE AND HYDROSTATIC PRESSURE DEPENDENCE OF SUBBAND STRUCTURE IN GaAs/AlxGa1−xAs MULTIPLE QUANTUM WELL

1990 ◽  
Vol 04 (14) ◽  
pp. 917-920 ◽  
Author(s):  
Y. FU
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Quantum Wells ◽  
Pressure Dependence ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Bulk Gaas ◽  
Pressure Coefficients ◽  
Subband Energy ◽  
Subband Structure

The temperature and hydrostatic pressure dependence of GaAs/AlxGa1−xAs multiple quantum well subband structures has been examined theoretically. Such effects on the subband energy measured from the corresponding band optimum are negligible, and therefore, the temperature and the hydrostatic pressure coefficients of these multiple quantum wells are dominated by those coefficients of the bulk GaAs bandgap.

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