Doping profile vs spin-resolved subband structure and spontaneous magnetization of selectively Mn-doped DMS narrow quantum wells

2006 ◽  
Vol 32 (1-2) ◽  
pp. 403-406 ◽  
Author(s):  
Hye-Jung Kim ◽  
Kyung-Soo Yi
Keyword(s):  
Quantum Wells ◽  
Spontaneous Magnetization ◽  
Doping Profile ◽  
Mn Doped ◽  
Subband Structure

MAGNETIZATION OF DIGITALLY Mn-DOPED DILUTED MAGNETIC SEMICONDUCTOR QUANTUM WELLS

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3757-3760 ◽  
Author(s):  
H. J. KIM ◽  
K. S. YI
Keyword(s):  
Quantum Wells ◽  
Spontaneous Magnetization ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Self Consistent ◽  
Spin Carrier ◽  
Diluted Magnetic ◽  
Magnetic Ion ◽  
Doping Profiles ◽  
Mn Doped

We present spin-resolved electronic properties of digitally Mn -doped diluted magnetic semiconductor (DMS) quantum wells (QWs) with an emphasis on the control of spontaneous magnetization and spin carrier distributions in terms of QW structure parameters and doping profiles of the magnetic ions. A combined Schrödinger and Poisson equation is solved numerically to obtain self-consistent subband wavefunctions and energies of the holes in the DMS QWs. Self-consistent spin-resolved subband structure shows that (i) the spatial distributions of the majority and minority spin carriers are separated in the DMS QW below the Curie temperature and (ii) the spontaneous magnetization of the Mn -doped magnetic nanostructure depends sensitively on doping profiles of the magnetic ion and the strength of exchange couplings.

Positive magnetoresistance peaked at a ferromagnetic transition in Mn-doped GaAs/AlGaAs quantum wells

JETP Letters ◽  
2014 ◽  
Vol 100 (3) ◽  
pp. 167-173 ◽  
Author(s):  
N. V. Agrinskaya ◽  
V. A. Berezovets ◽  
V. I. Kozub
Keyword(s):  
Quantum Wells ◽  
Ferromagnetic Transition ◽  
Positive Magnetoresistance ◽  
Mn Doped

Ferromagnetic Properties of Mn-Doped III–V Semiconductor Quantum Wells

2005 ◽  
Vol 18 (2) ◽  
pp. 189-193 ◽  
Author(s):  
N. Kim ◽  
J. W. Kim ◽  
S. J. Lee ◽  
Y. Shon ◽  
T. W. Kang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ferromagnetic Properties ◽  
Semiconductor Quantum Wells ◽  
Mn Doped

Valence-Subband Structure of Strained Quantum Wells

1995 ◽  
Vol 34 (Part 1, No. 6A) ◽  
pp. 3043-3050 ◽  
Author(s):  
Matsuto Ogawa ◽  
Tanroku Miyoshi
Keyword(s):  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Subband Structure

PECULIARITIES OF ELECTRON TRANSPORT IN THE COUPLED AlGaAs/GaAs QUANTUM WELLS WITH THIN CENTRAL AlAs BARRIER

2003 ◽  
Vol 02 (06) ◽  
pp. 565-573
Author(s):  
V. A. KULBACHINSKII ◽  
R. A. LUNIN ◽  
I. S. VASIL'EVSKII ◽  
G. B. GALIEV ◽  
V. G. MOKEROV ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Energy Structure ◽  
High Magnetic Fields ◽  
Single Quantum Well ◽  
Coupled Quantum Wells ◽  
Self Consistent ◽  
L 13 ◽  
Subband Structure

GaAs / AlGaAs structures with single quantum well (QW) of different width and with coupled quantum wells separated by central barrier of six monolayers of AlAs have been synthesized by MBE. The temperature dependence of resistance, Hall electron concentration and mobility were investigated in the temperature interval 4.2 K <T<300 K . Shubnikov–de Haas (SdH) oscillations and quantum Hall effect were also investigated in high magnetic fields up to 38 T. The influence of thin central barrier on the subband energy structure and electron mobility was analyzed for three values of QW width L=13, 26 and 35 nm. Self-consistent calculations of the subband structure and envelope wave function were carried out.

Hole subband structure and mobility calculations of double p-type d-doped GaAs quantum wells

2005 ◽  
Vol 2 (10) ◽  
pp. 3637-3640
Author(s):  
I. Rodriguez-Vargas ◽  
L. M. Gaggero-Sager
Keyword(s):  
Quantum Wells ◽  
Type D ◽  
P Type ◽  
Subband Structure

Properties of InGaAs/GaAs quantum wells with a δ〈Mn〉-doped layer in GaAs

2007 ◽  
Vol 49 (1) ◽  
pp. 171-177 ◽  
Author(s):  
B. A. Aronzon ◽  
A. B. Granovsky ◽  
A. B. Davydov ◽  
Yu. A. Danilov ◽  
B. N. Zvonkov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Mn Doped

Valence subband structure and optical gain of GaAs-AlGaAs (111) quantum wells

1989 ◽  
Vol 4 (11) ◽  
pp. 904-909 ◽  
Author(s):  
W Batty ◽  
U Ekenberg ◽  
A Ghit ◽  
E P O'Reilly
Keyword(s):  
Quantum Wells ◽  
Optical Gain ◽  
Subband Structure
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