IntersubbandL-valley and heavy-hole transitions in undoped GaSb/AlSb superlattices

1994 ◽  
Vol 50 (12) ◽  
pp. 8922-8925 ◽  
Author(s):  
Y. Abramovich ◽  
J. Poplawski ◽  
E. Ehrenfreund ◽  
D. Gershoni ◽  
B. Brar ◽  
...  
Keyword(s):  
Heavy Hole

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Light and heavy hole masses in GaAs and GaSb

1968 ◽  
Vol 1 (2) ◽  
pp. 533-538 ◽  
Author(s):  
A K Walton ◽  
U K Mishra
Keyword(s):  
Heavy Hole

Feasibility Of Novel Si-Based Interminiband Lasers

1998 ◽  
Vol 533 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Population Inversion ◽  
Heavy Hole ◽  
Optical Gain ◽  
Laser Structure ◽  
Strained Si ◽  
Superlattice Structures ◽  
A Current

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

scholarly journals Optical rotation of heavy hole spins by non-Abelian geometrical means

2009 ◽  
Vol 80 (23) ◽  
Author(s):  
Hui Sun ◽  
Xun-Li Feng ◽  
Chunfeng Wu ◽  
Jin-Ming Liu ◽  
Shangqing Gong ◽  
...  
Keyword(s):  
Heavy Hole ◽  
Optical Rotation

Observation of the n=2 excited states of the light and heavy hole excitons in GaAs grown directly on Si by OMVPE

1988 ◽  
Vol 65 (7) ◽  
pp. 553-556 ◽  
Author(s):  
S. Zemon ◽  
C. Jagannath ◽  
S.K. Shastry ◽  
G. Lambert
Keyword(s):  
Excited States ◽  
Heavy Hole

Exchange splitting of the heavy hole exciton ground state in GaAs-GaAlAs quantum wells

1990 ◽  
Vol 229 (1-3) ◽  
pp. 151-154 ◽  
Author(s):  
M. Potemski ◽  
J.C. Maan ◽  
A. Fasolino ◽  
K. Ploog ◽  
G. Weimann
Keyword(s):  
Quantum Wells ◽  
Ground State ◽  
Heavy Hole ◽  
Exchange Splitting ◽  
Exciton Ground State

scholarly journals Excitonic States and Related Optical Susceptibility in InN/AlN Quantum Well Under the Effects of the Well Size and Impurity Position

2021 ◽  
Vol 4 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Fathallah Jabouti ◽  
Haddou El Ghazi ◽  
Redouane En-nadir ◽  
Izeddine Zorkani ◽  
Anouar Jorio
Keyword(s):  
Quantum Well ◽  
Heavy Hole ◽  
Binding Energies ◽  
Exciton Transition ◽  
Impurity Position ◽  
Optical Susceptibility ◽  
Peak Energy ◽  
Eigen Values ◽  
Excitonic States ◽  
Photoluminescence Peak

Based on the finite difference method, linear optical susceptibility, photoluminescence peak and binding energies of three first states of an exciton trapped by a positive charge donor-impurity ( ) confined in InN/AlN quantum well are investigated in terms of well size and impurity position. The electron, heavy hole free and bound excitons allowed eigen-values and corresponding eigen-functions are obtained numerically by solving one-dimensional time-independent Schrödinger equation. Within the parabolic band and effective mass approximations, the calculations are made considering the coupling of the electron in the n-th conduction subband and the heavy hole in the m-th valence subband under the impacts of the well size and impurity position. The obtained results show clearly that the energy, binding energy and photoluminescence peak energy show a decreasing behavior according to well size for both free and bound cases. Moreover, the optical susceptibility associated to exciton transition is strongly red-shift (blue-shifted) with enhancing the well size (impurity position).

scholarly journals Спиновая динамика отрицательно заряженных экситонов в квантовых точках InP/(In,Ga)P в магнитном поле

2020 ◽  
Vol 62 (11) ◽  
pp. 1816
Author(s):  
С.В. Некрасов ◽  
Ю.Г. Кусраев ◽  
И.А. Акимов ◽  
L. Langer ◽  
M. Kotur ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Circular Polarization ◽  
Ground State ◽  
Heavy Hole ◽  
Spin Dynamics ◽  
Nuclear Spins ◽  
Time Resolved ◽  
Exciton Ground State ◽  
Charged Exciton

The dynamics of the photoluminescence negative circular polarization of the InP/(In,Ga)P quantum dots ensemble was studied. We find that in the time-resolved dependences of the polarization there are no oscillations in Voigt magnetic field. Also, with increasing field the polarization declines to zero. Such behavior is attributed to the peculiarities of the negatively charged exciton spin dynamics, particularly, to the fact that in the negatively charged exciton ground state the spin dynamics is governed by the heavy hole. We show that magnetic field depolarization of the photoluminescence occurs once the field of dynamically polarized nuclear spins acting on electron spins is surpassed.

Exciton binding energies in GaAs films on AlxGa1−xAs substrates

2015 ◽  
Vol 29 (30) ◽  
pp. 1550213 ◽  
Author(s):  
Zhenhua Wu ◽  
Lei Chen ◽  
Qiang Tian
Keyword(s):  
Film Thickness ◽  
Significant Influence ◽  
Heavy Hole ◽  
Dimensional Space ◽  
Light Hole ◽  
Binding Energies ◽  
Substrate Thickness ◽  
Dimensional Approach ◽  
Anisotropic System ◽  
Gaas Films

We use the fractional–dimensional approach (FDA) to study exciton binding energies in GaAs films on [Formula: see text] substrates. In this approach, the Schrödinger equation for a given anisotropic system is solved in a noninteger-dimensional space where the interactions are assumed to occur in an isotropic effective environment. The heavy-hole and light-hole exciton binding energies are calculated as functions of the film thickness and substrate thickness. The numerical results show that both the heavy-hole and light-hole exciton binding energies decrease monotonously as the film thickness increases. When the film thickness and the substrate thickness is relatively small, the change of substrate thickness has comparatively remarkable influence on both heavy-hole and light-hole exciton binding energies. As the substrate thickness increases, both the heavy-hole and light-hole exciton binding energies increase gradually. When the film thickness or the substrate thickness is relatively large, the change of substrate thickness has no significant influence on both heavy-hole and light-hole exciton binding energies.

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