Resonant-Raman-scattering study on short-period Si/Ge superlattices

1994 ◽  
Vol 50 (24) ◽  
pp. 18211-18218 ◽  
Author(s):  
R. Schorer ◽  
G. Abstreiter ◽  
H. Kibbel ◽  
H. Presting
Keyword(s):  
Raman Scattering ◽  
Short Period ◽  
Scattering Study ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman scattering study of CdSe nanocrystals passivated with CdS and ZnS

2007 ◽  
Vol 18 (28) ◽  
pp. 285701 ◽  
Author(s):  
V M Dzhagan ◽  
M Ya Valakh ◽  
A E Raevskaya ◽  
A L Stroyuk ◽  
S Ya Kuchmiy ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Cdse Nanocrystals ◽  
Scattering Study ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Conduction band structure in wurtzite GaAs nanowires: A resonant Raman scattering study

2012 ◽  
Vol 100 (7) ◽  
pp. 073102 ◽  
Author(s):  
Wang Peng ◽  
F. Jabeen ◽  
B. Jusserand ◽  
J. C. Harmand ◽  
M. Bernard
Keyword(s):  
Band Structure ◽  
Raman Scattering ◽  
Conduction Band ◽  
Gaas Nanowires ◽  
Scattering Study ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman scattering study of V, Cr and Co ions implanted into GaN

RSC Advances ◽  
2016 ◽  
Vol 6 (77) ◽  
pp. 73589-73594 ◽  
Author(s):  
Abdul Majid ◽  
J. J. Zhu ◽  
Usman Ali Rana ◽  
Salah Ud-Din Khan
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Scattering Study ◽  
Resonant Raman ◽  
Resonant Raman Scattering

200 keV ions of V, Cr and Co were implanted into wurtzite GaN/sapphire thin films at fluences of 5 × 1014 cm−2, 5 × 1015 cm−2 and 5 × 1016 cm−2.

Multiphonon resonant Raman scattering in short-period GaAs/AlAs superlattices

1991 ◽  
Vol 43 (14) ◽  
pp. 11815-11824 ◽  
Author(s):  
D. J. Mowbray ◽  
M. Cardona ◽  
K. Ploog
Keyword(s):  
Raman Scattering ◽  
Short Period ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman scattering study of Ar+ion-implanted AlGaN

2005 ◽  
Vol 17 (12) ◽  
pp. 1995-2002
Author(s):  
B Boudart ◽  
Y Guhel ◽  
J C Pesant ◽  
P Dhamelincourt ◽  
M A Poisson
Keyword(s):  
Raman Scattering ◽  
Scattering Study ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Ion Implanted

Resonant-Raman-scattering study of disorder effects inAlxGa1−xAs alloys

1991 ◽  
Vol 44 (16) ◽  
pp. 8605-8620 ◽  
Author(s):  
M. E. Delaney ◽  
T. C. McGlinn ◽  
M. V. Klein ◽  
H. Morkoç
Keyword(s):  
Raman Scattering ◽  
Disorder Effects ◽  
Scattering Study ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman scattering in short-period (Si)n/(Ge)msuperlattices

1989 ◽  
Vol 40 (2) ◽  
pp. 1361-1364 ◽  
Author(s):  
F. Cerdeira ◽  
M. I. Alonso ◽  
D. Niles ◽  
M. Garriga ◽  
M. Cardona ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Short Period ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Photoreflectance and Resonant Raman Scattering in Short Period Si/Ge Superlattices on Ge (001) and Si (001)

1991 ◽  
Vol 220 ◽  
Author(s):  
U. Menczigar ◽  
K. Eberl ◽  
G. Abstreiter
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Electronic States ◽  
Optical Phonons ◽  
Short Period ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Etalon Effect

ABSTRACTShort period Si/Ge superlattices have been grown on Ge (001) and Si (001) substrates by molecular beam epitaxy. The optical properties of the superlattices have been studied with photoreflectance. (PR) and resonant Raman scattering (RRS). With PR we are able to observe new, structural induced transitions for all superlattices which are related to E0-and E1-like gaps. The analysis of PR spectra is complicated by an optical etalon effect if the samples are sufficently thick. The E1-like transitions in the range between 1.9eV and 2.7eV are also studied with RRS. Due to the confinement of the optical phonons in the Ge and Si layers RRS is able to probe the bandstructure in each layer seperately. Localized electronic states in the Ge layers can be observed with RRS for a Si4Ge18 superlattice and are compared with PR measurements.

scholarly journals Resonant Raman scattering study of InSb etched by reactive ion beam etching

1996 ◽  
Vol 79 (11) ◽  
pp. 8853-8855 ◽  
Author(s):  
J. R. Sendra ◽  
G. Armelles ◽  
T. Utzmeier ◽  
J. Anguita ◽  
F. Briones
Keyword(s):  
Raman Scattering ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Scattering Study ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Reactive Ion Beam Etching
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