Multiphonon resonant Raman scattering in short-period GaAs/AlAs superlattices

1991 ◽  
Vol 43 (14) ◽  
pp. 11815-11824 ◽  
Author(s):  
D. J. Mowbray ◽  
M. Cardona ◽  
K. Ploog
1994 ◽  
Vol 50 (24) ◽  
pp. 18211-18218 ◽  
Author(s):  
R. Schorer ◽  
G. Abstreiter ◽  
H. Kibbel ◽  
H. Presting

1989 ◽  
Vol 40 (2) ◽  
pp. 1361-1364 ◽  
Author(s):  
F. Cerdeira ◽  
M. I. Alonso ◽  
D. Niles ◽  
M. Garriga ◽  
M. Cardona ◽  
...  

1991 ◽  
Vol 220 ◽  
Author(s):  
U. Menczigar ◽  
K. Eberl ◽  
G. Abstreiter

ABSTRACTShort period Si/Ge superlattices have been grown on Ge (001) and Si (001) substrates by molecular beam epitaxy. The optical properties of the superlattices have been studied with photoreflectance. (PR) and resonant Raman scattering (RRS). With PR we are able to observe new, structural induced transitions for all superlattices which are related to E0-and E1-like gaps. The analysis of PR spectra is complicated by an optical etalon effect if the samples are sufficently thick. The E1-like transitions in the range between 1.9eV and 2.7eV are also studied with RRS. Due to the confinement of the optical phonons in the Ge and Si layers RRS is able to probe the bandstructure in each layer seperately. Localized electronic states in the Ge layers can be observed with RRS for a Si4Ge18 superlattice and are compared with PR measurements.


1993 ◽  
Vol 42 (10) ◽  
pp. 1707
Author(s):  
HOU YONG-TIAN ◽  
HE GUO-SAN ◽  
ZHANG SHU-LIN ◽  
PENG ZHONG-LING ◽  
LI JIE ◽  
...  

1991 ◽  
Vol 43 (11) ◽  
pp. 9152-9157 ◽  
Author(s):  
F. Calle ◽  
D. J. Mowbray ◽  
D. W. Niles ◽  
M. Cardona ◽  
J. M. Calleja ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-345-C5-348
Author(s):  
S.-K. CHANG ◽  
H. NAKATA ◽  
A. V. NURMIKKO ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR

2001 ◽  
Vol 47 (1-2) ◽  
pp. 50-54 ◽  
Author(s):  
Yan Wang ◽  
Ruifeng Yue ◽  
Hexiang Han ◽  
Xianbo Liao ◽  
Yongqian Wang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document