scholarly journals Metastable-defect generation in hydrogenated amorphous silicon

1994 ◽  
Vol 50 (3) ◽  
pp. 1551-1556 ◽  
Author(s):  
Qing Zhang ◽  
Hideki Takashima ◽  
Jiang-Huai Zhou ◽  
Minoru Kumeda ◽  
Tatsuo Shimizu
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Defect Generation ◽  
Hydrogenated Amorphous ◽  
Metastable Defect

Effect of Deposition-Induced Annealable Defects on Light-Induced Defect Generation in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Jong-Hwan Yoon
Keyword(s):  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Generation Rate ◽  
Defect Generation ◽  
Saturated State ◽  
Microscopic Models ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

In this paper we present a method to determine the annealable defect density(ΔNann) present in hydrogenated amorphous silicon(a-Si:H). The effects of the annealable defects on the light-induced defect generation rate, saturated defect density (Nsat) and the change of defect density in the light-induced saturated state(ΔNsat) have been studied. Annealable defect density was varied by depositing samples at various substrate temperatures or by post-growth anneals of samples grown at low substrate temperatures. It is found that the generation rate, N satand ΔNsat are well correlated with ΔNann. In particular, the ΔNsat is found to follow a relation ΔNsat ≈ ΔNann. These results suggest that defect-related microscopic models are appropriate for light-induced metastability.

Metastable defect migration under high carrier injection in hydrogenated amorphous silicon p-i-n solar cells

2005 ◽  
Vol 98 (4) ◽  
pp. 044511 ◽  
Author(s):  
U. Dutta ◽  
P. Chatterjee ◽  
S. Tchakarov ◽  
M. Uszpolewicz ◽  
P. Roca i Cabarrocas
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Injection ◽  
Defect Migration ◽  
High Carrier ◽  
Hydrogenated Amorphous ◽  
Metastable Defect

scholarly journals Temperature-Dependent Open-Circuit Voltage Measurements and Light-Soaking in Hydrogenated Amorphous Silcon Solar Cells

2005 ◽  
Vol 862 ◽  
Author(s):  
Jianjun Liang ◽  
E. A. Schiff ◽  
S. Guha ◽  
B. Yan ◽  
J. Yang
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Open Circuit ◽  
Illumination Intensity ◽  
Temperature Dependent ◽  
Defect Generation ◽  
Hydrogenated Amorphous

AbstractWe present temperature-dependent measurements of the open-circuit voltage VOC(T) in hydrogenated amorphous silicon nip solar cells prepared at United Solar. At room-temperature and above, VOC measured using near-solar illumination intensity differs by as much as 0.04 V for the as-deposited and light-soaked states; the values of VOC for the two states converge below 250 K. Models for VOC based entirely on recombination through deep levels (dangling bonds) do not account for the convergence effect. The convergence is present in a model that assumes the recombination traffic in the as-deposited state involves only bandtails, but which splits the recombination traffic fairly evenly between bandtails and defects for the light-soaked state at room-temperature. Recombination mechanisms are important in understanding light-soaking, and the present results are inconsistent with at least one well-known model for defect generation.

The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin

2010 ◽  
Vol 1245 ◽  
Author(s):  
Arno H.M. Smets ◽  
Chris R. Wronski ◽  
Miro Zeman ◽  
M. van de Sanden
Keyword(s):  
Experimental Evidence ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Defect States ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous ◽  
Metastable Defect ◽  
Hydrogen Bonded

AbstractIn the recent years more and more theoretical and experimental evidence have been found that the hydrogen bonded to silicon in dense hydrogenated amorphous silicon (a-Si:H) predominantly resides in hydrogenated divacancies. In this contribution we will philosophize about the option that the small fraction of divacancies, missing at least one of its bonded hydrogen, may correspond to some of the native and metastable defect states of a-Si:H. We will discuss that such defect entities are an interesting basis for new and alternative views on the origin of the SWE.

Pulsed-Light-Induced Metastable Defect Creation in Hydrogenated Amorphous Silicon

1995 ◽  
Vol 377 ◽  
Author(s):  
Jong-Hwan Yoon ◽  
H. L. Kim
Keyword(s):  
Time Dependence ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Pulsed Light ◽  
Illumination Time ◽  
Defect Creation ◽  
Annealing Rate ◽  
Hydrogenated Amorphous ◽  
Metastable Defect

ABSTRACTWe report the results of a study of metastable defect creation by pulsed light soaking in undoped hydrogenated amorphous silicon (a-Si:H). An illumination time dependence of the defect density, a saturated defect density, and light-induced annealing under pulsed laser light have been studied. Measurements show approximately a t1/2 time-dependence of the defect creation, which is independent of light intensity. It is observed that the saturation value of the defect density is about one order of magnitude higher than by cw illumination in device quality films. It has been suggested that these results would be due to the difference in the light-induced defect annealing rate between cw and pulsed lights, in which it is found that the light-induced annealing rate by pulsed light is lower than by cw light.

Bonded Hydrogen Atom Participation in Metastable Defect Formation in Hydrogenated Amorphous Silicon

1998 ◽  
Vol 507 ◽  
Author(s):  
G. Lucovsky ◽  
H. Yang
Keyword(s):  
Hydrogen Atom ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Amorphous Silicon ◽  
Defect Formation ◽  
Hydrogenated Amorphous Silicon ◽  
Reaction Pathways ◽  
Reaction Barriers ◽  
Hydrogenated Amorphous ◽  
Metastable Defect

ABSTRACTThis paper proposes intrinsic reaction pathways for generation of metastable defects in hydrogenated undoped or intrinsic amorphous silicon (i-a-Si:H). Since these pathways involve only silicon (Si) and hydrogen (H) atoms, this approach is valid for device grade materials in which concentrations of oxygen (0) atoms, and nitrogen-hydrogen (N-H) groups are present at concentrations below about 1019 cm−3. Ab initio calculations demonstrate that the proposed generation pathway reactions are exothermic with relatively small reaction barriers (< 0.4 eV).

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