Metastable defect migration under high carrier injection in hydrogenated amorphous silicon p-i-n solar cells

2005 ◽  
Vol 98 (4) ◽  
pp. 044511 ◽  
Author(s):  
U. Dutta ◽  
P. Chatterjee ◽  
S. Tchakarov ◽  
M. Uszpolewicz ◽  
P. Roca i Cabarrocas
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Injection ◽  
Defect Migration ◽  
High Carrier ◽  
Hydrogenated Amorphous ◽  
Metastable Defect

Carrier Injection Related Stability of Intrinsic Hydrogenated Amorphous Silicon Film and Solar Cells

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MB14
Author(s):  
Jinjoo Park ◽  
Youngkuk Kim ◽  
Shaikh Mohammad Iftiquar ◽  
Chonghoon Shin ◽  
Sunwha Lee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Injection ◽  
Amorphous Silicon Film ◽  
Hydrogenated Amorphous

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Effect of the Quantum Size Effect on the Performance of Solar Cells with a Silicon Nanowire Array Embedded in SiO2

2012 ◽  
Vol 1439 ◽  
pp. 145-150
Author(s):  
Yasuyoshi Kurokawa ◽  
Shinya Kato ◽  
Yuya Watanabe ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
...  
Keyword(s):  
Solar Cells ◽  
Size Effect ◽  
Amorphous Silicon ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Hydrogenated Amorphous Silicon ◽  
Open Circuit ◽  
Quantum Size Effect ◽  
Quantum Size ◽  
Hydrogenated Amorphous

ABSTRACTThe electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (Eg=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.

scholarly journals Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer

Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 402 ◽  
Author(s):  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Ming Jie Zhao ◽  
Hai-Jun Lin ◽  
Wen-Zhang Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Flow Rate ◽  
Computer Aided Design ◽  
Hydrogenated Amorphous Silicon ◽  
Wavelength Region ◽  
Window Layer ◽  
Solar Cell Performance ◽  
Hydrogenated Amorphous

Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used.

Sign in / Sign up

Export Citation Format

Share Document