Origin of multiple-peak photoluminescence spectra of light-emitting porous silicon

1994 ◽  
Vol 50 (16) ◽  
pp. 12230-12233 ◽  
Author(s):  
Xun Wang ◽  
Ping-hai Hao ◽  
Daming Huang ◽  
Fu-long Zhang ◽  
Min Yang ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Photoluminescence Spectra ◽  
Light Emitting ◽  
Multiple Peak

Photoluminescence from nano porous silicon prepared by photoelectrochemical etching of n-type single crystalline silicon

2000 ◽  
Vol 638 ◽  
Author(s):  
Chi-Woo Lee ◽  
Buem-Suck Kim ◽  
Dong-Il Kim ◽  
Nam-Ki Min ◽  
Suk-In Hong
Keyword(s):  
Porous Silicon ◽  
Electrolyte Concentration ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Photoluminescence Spectra ◽  
Applied Potential ◽  
Photoelectrochemical Etching ◽  
Light Emitting ◽  
Silicon Materials ◽  
Illumination Wavelength

AbstractThe influence of operating parameters in producing light-emitting porous silicon materials was investigated in ethanolic solutions of hydrofluoric acid. Photoluminescence spectra depended on applied potential, the intensity and wavelength of illumination, and electrolyte concentration. When the applied potential and the illumination wavelength increased, the photoluminescence shifted to longer wavelength. Change in HF concentration resulted in different intensity in photoluminescence.

Quantitative Determination of Color Coordinates for Lumninescent Materials

2011 ◽  
Vol 181-182 ◽  
pp. 285-288 ◽  
Author(s):  
Bao Gai Zhai ◽  
Yuan Ming Huang
Keyword(s):  
Liquid Crystal ◽  
Porous Silicon ◽  
Silicon Film ◽  
Red Light ◽  
Green Light ◽  
Luminescent Materials ◽  
Photoluminescence Spectra ◽  
Light Emitting ◽  
Color Coordinates

On the basis of the photoluminescence spectra, a spectrophotometric methodology is developed to determine the color coordinates of luminescent materials such as the red light-emitting porous silicon film, the green light-emitting aluminate-based phosphor and the blue light-emitting liquid crystal.

New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Green Light ◽  
Light Emitting ◽  
Porous Region ◽  
First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON

1994 ◽  
Vol 08 (02) ◽  
pp. 69-92 ◽  
Author(s):  
XUN WANG
Keyword(s):  
Porous Silicon ◽  
Blue Light ◽  
Light Emission ◽  
Energy State ◽  
Surface Recombination Velocity ◽  
Luminescence Spectroscopy ◽  
Carrier Injection ◽  
Blue Light Emission ◽  
Light Emitting ◽  
Si Nanostructures

In this review article, we give a new insight into the luminescence mechanism of porous silicon. First, we observed a “pinning” characteristic of photoluminescent peaks for as-etched porous silicon samples. It was explained as resulting from the discontinuous variation of the size of Si nanostructures, i.e. the size quantization. A tight-binding calculation of the energy band gap widening versus the dimension of nanoscale Si based on the closed-shell Si cluster model agrees well with the experimental observations. Second, the blue-light emission from porous silicon was achieved by using boiling water treatment. By investigating the luminescence micrographic images and the decaying behaviors of PL spectra, it has been shown that the blue-light emission is believed to be originated from the porous silicon skeleton rather than the surface contaminations. The conditions for achieving blue light need proper size of Si nanostructures, low-surface recombination velocity, and mechanically strong skeleton. The fulfillment of these conditions simultaneously is possible but rather critical. Third, the exciton dynamics in light-emitting porous silicon is studied by using the temperature-dependent and picosecond time-resolved luminescence spectroscopy. A direct evidence of the existence of confined excitons induced by the quantum size effect has been revealed. Two excitation states are found to be responsible for the visible light emission, i.e. a higher lying energy state corresponding to the confined excitons in Si nanostructures and a lower lying state related with surfaces of Si wires or dots. A picture of the carrier transfer between the quantum confined state and the surface localized state has been proposed. Finally, we investigated the transient electroluminescence behaviors of Au/porous silicon/Si/Al structure and found it is very similar to that of an ordinary p-n junction light-emitting diode. The mechanism of electroluminescence is explained as the carrier injection through the Au/porous silicon Schotky barrier and the porous silicon/p-Si heterojunction into the corrugated Si wires, where the radiative recombination of carriers occurs.

Porous silicon light-emitting diodes – mechanisms in the operation

2001 ◽  
Vol 17 (1-2) ◽  
pp. 111-116 ◽  
Author(s):  
K. Molnár ◽  
T. Mohácsy ◽  
M. Ádám ◽  
I. Bársony
Keyword(s):  
Porous Silicon ◽  
Light Emitting Diodes ◽  
Light Emitting

Composition and Structure of Spark Eroded Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. E. Hummel ◽  
S.-S. Chang ◽  
M. Ludwig ◽  
A. Morrone
Keyword(s):  
Porous Silicon ◽  
Polycrystalline Silicon ◽  
Amorphous Matrix ◽  
Vibrational Modes ◽  
Photoluminescence Spectra ◽  
X Ray ◽  
Composition And Structure ◽  
Bending Mode ◽  
Spark Erosion ◽  
Silicon Particles

ABSTRACTPorous silicon which has been prepared by a “dry” technique, that is, by spark erosion, yields similar photoluminescence spectra as anodically etched porous silicon which has been prepared in aqueous solutions. Fourier transform infrared spectra reveal that the dominant features in spark eroded silicon are the Si-O-Si stretching mode and the Si-O-Si bending mode. No infrared vibrational modes characteristic for siloxene have been found in spark eroded Si. Results from X-ray and electron diffraction studies suggest that spark eroded Si involves minute polycrystalline silicon particles which are imbedded in an amorphous matrix.

Light emitting porous silicon diode based on a silicon/porous silicon heterojunction

1999 ◽  
Vol 86 (11) ◽  
pp. 6474-6482 ◽  
Author(s):  
L. Pavesi ◽  
R. Chierchia ◽  
P. Bellutti ◽  
A. Lui ◽  
F. Fuso ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Light Emitting ◽  
Silicon Diode

A phenomenological investigation on porous silicon electroluminescence

1993 ◽  
Vol 298 ◽  
Author(s):  
P. Steiner ◽  
W. Lang ◽  
F. Kozlowski ◽  
H. Sandmaier
Keyword(s):  
Porous Silicon ◽  
Light Emitting Diodes ◽  
Phenomenological Theory ◽  
Electroluminescence Spectrum ◽  
Light Emitting

AbstractThe processing of light emitting diodes in porous silicon with green/blue electroluminescence spectrum is described. The spectral behavicur and the degradation are investigated. A phenomenological theory for the luminescence is given.

Correlation of Raman and photoluminescence spectra of porous silicon

1992 ◽  
Vol 60 (1) ◽  
pp. 112-114 ◽  
Author(s):  
R. Tsu ◽  
H. Shen ◽  
M. Dutta
Keyword(s):  
Porous Silicon ◽  
Photoluminescence Spectra
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